Semiconductor Voltage Adaptation via Transistor Characteristic Detection

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Solution Overview

Problem

Semiconductor apparatuses malfunction due to changes in temperature, voltage, and process characteristics, as they operate only with preset voltage levels, leading to potential operational failures.

Innovation Solution

A semiconductor apparatus is designed with a detection voltage generation circuit to generate voltages varying with PMOS and NMOS transistor characteristics, a code generation circuit to decode these voltages, a reference voltage generation circuit to produce a reference voltage, and an internal voltage generation circuit to generate an internal voltage, allowing the internal circuit to operate with variable voltage levels adjusted according to temperature, voltage, and process changes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If preset voltage levels are used for operation, then device simplicity is maintained, but reliability deteriorates due to sensitivity to temperature, voltage, and process changes

Engineering Contradiction:
Improveoperational reliabilityVSAvoidvoltage generation circuit complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent implements dynamic voltage adjustment by generating detection voltages that vary according to transistor characteristics, converting static preset voltages into dynamic adaptive voltages that respond to environmental changes

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent employs feedback mechanisms where detection voltages are generated based on actual transistor characteristics, the difference between detection and reference voltages is calculated, and adjustment voltages are applied back to compensate for variations, creating a closed-loop control system

Inventive Principle:
Principle #23Feedback

2Adaptability or versatility

If detection and adjustment circuits are added to compensate for characteristic changes, then adaptability improves, but device complexity increases

Engineering Contradiction:
Improvevoltage adaptation capabilityVSAvoidcircuit structure complexity
Core Design Contradiction:
Adaptability or versatilityVSDevice complexity

Solution Approach 1:

The patent changes the voltage parameter dynamically by generating detection voltages that reflect actual transistor characteristics and adjusting operation voltages accordingly, allowing the system to adapt to different operating conditions

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent segments the voltage generation process into distinct functional blocks: detection voltage generation circuit, reference voltage generation circuit, and adjustment voltage generation circuit, each performing a specific function in the overall adaptation process

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS9964974B2Semiconductor apparatus
Publication Date: 2018.05.08 SK HYNIX INC

AI summary

A semiconductor apparatus includes a detection voltage generation circuit configured to generate a first detection voltage and a second detection voltage of which voltage levels are varied according to characteristics of a PMOS transistor and an NMOS transistor in response to a detection enable signal, a code generation circuit configured to generate a detection code in response to the voltage levels of the first and second detection voltages, a reference voltage generation circuit configured to generate a reference voltage in response to the detection code, an internal voltage generation circuit configured to generate an internal voltage in response to the reference voltage, and an internal circuit configured to operate by receiving the internal voltage.