Semiconductor Element With Integrated Voltage Drop Layer
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Solution Overview
Problem
Existing semiconductor elements, such as light-emitting diode chips, face a voltage mismatch when connected to high voltage power sources like 100V or 220V power lines due to their inherent voltage requirements, necessitating external step-down converters or series connections, which add complexity and inefficiency as their luminous efficiency increases.
Innovation Solution
A semiconductor element comprising a first voltage-drop portion and a second voltage-drop portion connected via a material with a smaller physical dimension, allowing operation under a total bias voltage greater than the second voltage drop, which can include photoelectric conversion and additional functional components like supporting structures or heat dissipation, to manage voltage drops effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If external step-down converters are used to adapt high voltage power sources to LED operating voltage, then voltage compatibility is achieved, but device complexity increases
Solution Approach 1:
The patent merges the voltage dropping function with the LED chip structure itself by integrating a voltage dropping layer directly into the semiconductor substrate. This eliminates the need for external step-down converters and combines multiple functions (light emission and voltage adaptation) into a single integrated component, thereby reducing device complexity while maintaining voltage compatibility.
2Adaptability or versatility
If multiple light-emitting diodes are connected in series to match high voltage power lines, then voltage compatibility is achieved, but the number of components increases
Solution Approach 1:
The patent combines multiple voltage dropping functions into a single integrated chip structure. Instead of requiring multiple separate LEDs or external components to achieve voltage matching, the invention integrates a voltage dropping layer within the semiconductor substrate that provides the necessary voltage adaptation in conjunction with the light-emitting diode, thereby reducing the total number of components required.
3Loss of energy
If the number of series light-emitting diodes is reduced to match improving luminous efficiency, then energy efficiency improves, but voltage mismatch increases
Solution Approach 1:
The patent applies local quality by creating a specific voltage dropping layer with tailored electrical properties within the semiconductor substrate. This layer is designed with specific doping concentrations and thickness to provide precise voltage dropping characteristics that complement the high-efficiency LED, enabling voltage compatibility without requiring reduction in the number of high-performance LEDs.
Solution Approach 2:
The invention merges the voltage adaptation function directly into the LED chip structure through the integrated voltage dropping layer. This allows high-efficiency LEDs to operate at reduced numbers while the integrated layer compensates for voltage mismatch, thereby maintaining both energy efficiency and voltage compatibility simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables seamless integration with high voltage power sources without external converters, enhancing efficiency and reducing the number of semiconductor elements required, thus addressing the voltage mismatch and improving luminous efficacy.
Implementation Method 1
a connecting material between the first voltage-drop portion and the second voltage-drop portion. The connecting material has a physical dimension, such as the thickness, smaller than that of the first voltage-drop portion, the second voltage-drop portion, or both
Data Source
AI summary
A semiconductor element according to an embodiment of present application includes a first voltage drop portion providing a first voltage drop, a second voltage drop portion providing a second voltage drop, and a connecting material between the first voltage drop portion and the second voltage drop portion and having a physical dimension smaller than that of at least one of the first voltage drop portion and the second voltage drop portion. The semiconductor element can operate under a total bias voltage. The total bias voltage is greater than the second voltage drop, while the second voltage drop is greater than or equal to the first voltage drop.