Semiconductor Voltage Pumping Unit for N and P Substrate Bias Generation
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Solution Overview
Problem
Conventional semiconductor integrated circuits require duplicate circuits for generating N-substrate and P-substrate bias voltages, leading to large area occupation and difficulties in achieving low power consumption and high integration due to the size of ring oscillating and voltage pumping units.
Innovation Solution
A single voltage pumping unit is used to generate both N-substrate and P-substrate bias voltages through a feedback detection mechanism, level shifting, and driving control signals, reducing the need for duplicate circuits and minimizing area occupation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If duplicate voltage generating units are used for N-substrate and P-substrate bias voltages, then each substrate bias voltage can be generated independently, but the area occupied within the semiconductor integrated circuit increases significantly
Solution Approach 1:
The patent merges the N-substrate bias voltage generating unit and P-substrate bias voltage generating unit into a single integrated voltage generating apparatus. The shared components include the voltage detecting unit that detects both VBBN and VBBP, the ring oscillating unit that generates oscillation signals for both voltage pumps, and the power source unit that supplies power to both substrate bias voltage generating units. This merging reduces the total area occupied while maintaining independent generation capability for both substrate bias voltages.
Solution Approach 2:
The voltage generating apparatus is designed with multi-functionality where a single apparatus can generate both N-substrate bias voltage (VBBN) and P-substrate bias voltage (VBBP). The voltage detecting unit can detect both voltage levels, the ring oscillating unit can provide oscillation signals for both voltage pumping units, and the power source unit can supply power to both substrate bias voltage generating units simultaneously, enabling one apparatus to perform multiple functions.
2Reliability
If duplicate ring oscillating units and voltage pumping units are used, then each substrate bias voltage can be pumped independently, but the area occupied increases and power consumption increases
Solution Approach 1:
The patent combines two separate voltage pumping operations into a single voltage pumping unit that can operate in two modes. The voltage pumping unit receives oscillation signals from the shared ring oscillating unit and can pump voltage to generate either VBBN or VBBP based on control signals. This merging eliminates the need for duplicate ring oscillating units and voltage pumping units, thereby reducing power consumption while maintaining independent pumping capability for both substrate bias voltages.
Solution Approach 2:
The voltage pumping unit is designed as a universal unit that can perform both N-substrate bias voltage pumping and P-substrate bias voltage pumping functions. By sharing the ring oscillating unit and voltage pumping unit, the apparatus achieves multi-functionality where these shared components serve both substrate bias voltage generation needs, reducing overall power consumption compared to having duplicate dedicated units for each function.
3Reliability
If separate voltage generating units are used for N-substrate and P-substrate bias voltages, then each voltage can be generated with optimized characteristics, but high integration is difficult to achieve
Solution Approach 1:
The patent merges the N-substrate bias voltage generating unit and P-substrate bias voltage generating unit into a single integrated apparatus with shared components. The voltage detecting unit detects both VBBN and VBBP levels, the ring oscillating unit generates oscillation signals for both voltage pumping operations, and the power source unit supplies power to both substrate bias voltage generating units. This merging achieves high integration by consolidating multiple functions into one apparatus while maintaining the ability to independently control and optimize each substrate bias voltage generation process.
Data Source
AI summary
An apparatus for generating an internal voltage in a semiconductor integrated circuit includes a first voltage generating unit configured to detect a feedback voltage level of a first internal voltage and perform a pumping operation, thereby generating a first internal voltage, and a second voltage generating unit configured to generate a second internal voltage by detecting a feedback voltage level of the second internal voltage, performing level shifting on the detected feedback voltage level, receiving the first internal voltage, and generating the second internal voltage based on the level shifted feedback voltage signal and the received first internal voltage.