Semiconductor Device Data Reference Voltage Sensing
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Solution Overview
Problem
In semiconductor devices, accurately sensing parameters such as the time for a data reference voltage to reach a target level is challenging due to capacitive and loading effects from monitoring pads and sensing equipment, especially at high operating frequencies.
Innovation Solution
A semiconductor device with a data storage unit, test operation unit, and test operation sensing signal generation unit that generates and compares test data and comparison data to determine the logic level of the data reference voltage, allowing for precise sensing of the time taken for the voltage to reach a target level, even at high frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the data reference voltage is sensed outside the semiconductor device using monitoring pads and sensing equipment, then the training test can be performed, but the measurement accuracy deteriorates due to capacitive and loading effects
Solution Approach 1:
The patent extracts the sensing operation from the external environment (monitoring pads and sensing equipment) and relocates it inside the semiconductor device. By generating the test operation sensing signal within the device boundaries, the measurement process is isolated from external capacitive and loading effects, thereby resolving the contradiction between performability and measurement accuracy
Solution Approach 2:
The patent introduces an intermediary mechanism (the test operation sensing signal generation unit) that mediates between the data reference voltage generation and the external sensing equipment. This intermediary generates internal sensing signals that are immune to external effects, allowing accurate measurements without direct exposure to harmful external factors
2Speed
If the operating frequency of the semiconductor device is increased to achieve high-speed operation, then the processing speed improves, but the sensing stability deteriorates
Solution Approach 1:
The patent performs preliminary action by generating the test operation sensing signal in advance based on test commands received before high-frequency operation begins. This pre-generated sensing signal provides a stable reference that remains valid during high-speed operation, resolving the contradiction between speed and sensing stability
Solution Approach 2:
The patent implements periodic action by generating test operation sensing signals at specific intervals based on test entry and exit commands. This periodic generation ensures that sensing operations are synchronized with the high-frequency operation cycles, maintaining stability even at elevated operating frequencies
Data Source
AI summary
A semiconductor device includes a data storage unit configured to receive input data, outputs the input data with a difference in voltage level between logic levels, and output comparison data whose logic level is distinguished from the input data; a test operation unit configured to determine a logic level of test data periodically in response to a data reference voltage whose voltage level is determined in response to a level test code during a test operation period defined by a test entry command and a test exit command, and generate a test result signal by comparing a logic level of the comparison data with the logic level of the test data; and a test operation sensing signal generation unit configured to generate a test operation sensing signal that is activated in response to the test entry command and inactivated in response to the test result signal.