Semiconductor Voltage Transfer Unit Segmentation
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Solution Overview
Problem
As semiconductor devices are miniaturized, there is a need for techniques to secure the characteristics of high voltage transistors in a narrow area while reducing the area occupied by voltage transfer units and improving the breakdown voltage of pass transistors.
Innovation Solution
The semiconductor device incorporates a structure with first and second active regions and transistors, connected by a connecting structure, which includes global and local contact plugs and routing lines, allowing for efficient voltage transfer and increased insulation distances within a narrow area, thereby enhancing the breakdown voltage and operational reliability of high voltage pass transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the area occupied by voltage transfer units is reduced through miniaturization, then device integration is improved, but the breakdown voltage of pass transistors deteriorates
Solution Approach 1:
The active region is divided into multiple segments including a first active region, a second active region, and multiple protruding parts (first, second, third, and fourth protruding parts). This segmentation allows each segment to be independently optimized for voltage transfer while maintaining adequate insulation distances, thereby reducing the overall area while preserving breakdown voltage characteristics.
Solution Approach 2:
The invention transitions from a conventional planar active region to a three-dimensional structure with protruding parts extending in multiple directions. The first and second protruding parts extend in a first direction, while the third and fourth protruding parts extend in a second direction intersecting the first direction, creating a multi-dimensional voltage transfer network that reduces area occupation while maintaining electrical performance.
2Reliability
If the insulation distance is increased to improve breakdown voltage, then reliability is improved, but the area occupied by the voltage transfer unit increases
Solution Approach 1:
Different regions of the active structure are assigned different functional qualities. The protruding parts are specifically designed with extended dimensions in certain directions to provide adequate insulation distances where needed, while the main body remains compact. This localized optimization ensures breakdown voltage requirements are met without unnecessarily increasing the overall area.
Solution Approach 2:
The active region structure employs asymmetric design with protruding parts extending preferentially in specific directions (first direction for first and second protruding parts, second direction for third and fourth protruding parts). This asymmetric configuration optimizes insulation distances in critical directions while minimizing area occupation in other directions, resolving the contradiction between insulation distance and area.
Data Source
AI summary
A semiconductor device may include a first active region including a first main region and a first protruding part. The semiconductor device may include a second active region including a second main region and a second protruding part. The semiconductor device may include a first transistor formed on the first active region. The semiconductor device may include a second transistor formed on the second active region. The semiconductor device may include a connecting structure connecting the first protruding part and the second protruding part to each other.