Semiconductor Wafer Doping Accuracy via Lateral Ion Dose Variation
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Solution Overview
Problem
Achieving doping accuracy in semiconductor technology is challenging, leading to deviations in electrical performance between semiconductor dies from different wafers and even between dies from the same wafer, resulting in inconsistencies in electrical characteristics such as blocking capability.
Innovation Solution
A method involving determining electrical parameters for each semiconductor device and implanting doping ions with laterally varying doses based on these parameters, using a proton implantation apparatus with a control module to adjust implantation doses, ensuring that over 70% of compensation devices have a breakdown voltage varying by less than 10% from the nominal value.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional doping methods are used, then manufacturing process is simple, but doping accuracy and electrical performance consistency deteriorate
Solution Approach 1:
The patent applies preliminary action by measuring electrical parameters (such as breakdown voltage) of individual semiconductor devices before the doping process, and using these measurements to determine site-specific doping parameters. This preliminary characterization allows the subsequent doping step to be precisely tailored to each device's actual electrical properties, thereby achieving high doping accuracy while maintaining process feasibility through a systematic two-step approach.
2Reliability
If uniform implantation dose is applied, then manufacturing process is simple, but electrical performance consistency between devices deteriorates
Solution Approach 1:
The patent implements local quality by transitioning from a uniform implantation dose applied across the entire wafer to site-specific implantation doses determined by individual device electrical parameters. Each semiconductor device receives a customized doping profile based on its measured characteristics (such as breakdown voltage deviations), ensuring that local electrical performance requirements are met for each device while maintaining overall manufacturing consistency through automated parameter adjustment.
3Manufacturing precision
If site-specific doping parameters are used, then doping accuracy improves, but measurement and control complexity increases
Solution Approach 1:
The patent replaces complex manual measurement and adjustment procedures with automated electrical parameter measurement systems and computer-controlled doping parameter adjustment. Electrical parameters such as breakdown voltage are measured automatically for each device, and the measured values are fed into a control system that automatically determines the appropriate doping parameters, eliminating the need for manual intervention and reducing measurement complexity while maintaining high precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the reliability of semiconductor devices by reducing deviations and inhomogeneity, improving doping accuracy and electrical performance consistency across semiconductor devices.
Implementation Method 1
a proton implantation module (311) configured to implant protons into a semiconductor substrate
Data Source
AI summary
A method for forming a semiconductor device includes determining at least one electrical parameter for each semiconductor device of a plurality of semiconductor devices to be formed in a semiconductor wafer. The method further includes implanting doping ions into device areas of the semiconductor wafer used for forming the plurality of semiconductor devices with laterally varying implantation doses based on the at least one electrical parameter of the plurality of semiconductor devices.