Semiconductor Device Wafer Process Integration
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Solution Overview
Problem
Conventional semiconductor devices with light emitting elements face challenges in miniaturization and have complex, costly manufacturing processes due to the need for separate assembly of components and bonding wires, making it difficult to produce smaller and thinner devices.
Innovation Solution
The semiconductor device is manufactured using a wafer process where light emitting elements are formed on a substrate with conductive regions and electrodes, and then cut into individual dies, eliminating the need for separate assembly and bonding wires, and utilizing a wafer process to form finer components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If conventional separate assembly processes are used for light emitting elements and bonding wires, then component reliability is maintained, but device size cannot be reduced and manufacturing complexity increases
Solution Approach 1:
The patent merges the light emitting element and bonding wire functions into a single integrated structure. The conductive layer serves dual purposes as both the bonding wire connection and the electrical conductor, eliminating the need for separate bonding wire assembly steps. This integration directly reduces device size and simplifies manufacturing processes while maintaining electrical connectivity and mechanical bonding functions.
Solution Approach 2:
The conductive layer is formed on the substrate before the light emitting element is mounted. This preliminary formation of the conductive structure allows subsequent assembly steps to be simplified, as the electrical connection path is already established. The light emitting element is then directly connected to the pre-formed conductive layer, eliminating the need for separate bonding wire attachment processes.
2Productivity
If conventional bonding wire assembly is used, then electrical connectivity is achieved, but manufacturing cost increases and productivity decreases
Solution Approach 1:
The patent combines multiple manufacturing operations into a single integrated process. The conductive layer formation, electrical connection, and mechanical bonding are merged into one assembly step where the light emitting element is directly mounted onto the pre-formed conductive layer. This eliminates separate bonding wire attachment operations, reducing manufacturing steps, lowering costs, and increasing productivity.
Solution Approach 2:
The patent extracts the bonding wire function from the assembly process by integrating it into the conductive layer structure. Instead of using separate bonding wires that require individual attachment operations, the conductive layer itself provides the electrical connection path, eliminating the need for bonding wire materials and the complex assembly operations required to attach them.
3Manufacturing precision
If finer components are required, then device performance improves, but conventional assembly methods make it difficult to achieve finer dimensions
Solution Approach 1:
The patent merges the electrical connection function into the substrate's conductive layer, which can be formed with precise dimensional control using standard semiconductor fabrication techniques. This integration allows for finer component dimensions because the conductive layer can be patterned to exact specifications before assembly, eliminating the need for separate bonding wire operations that are difficult to control at fine dimensions.
Solution Approach 2:
The patent replaces the mechanical bonding wire attachment process with a planar conductive layer connection. Instead of using mechanical bonding wires that require precise positioning and attachment forces, the electrical connection is achieved through the conductive layer formed on the substrate surface. This substitution enables finer dimensions because the conductive layer can be precisely controlled through deposition and patterning processes rather than mechanical manipulation.
Data Source
AI summary
The invention is directed to providing a smaller semiconductor device with a lower manufacturing cost and higher reliability and a method of manufacturing the same. A light emitting element (a LED die 8) is formed on a first substrate 1. A cathode electrode 10 connected to an N type region of the LED die 8 is formed between the first substrate 1 and the LED die 8. The side surface of the LED die 8 is covered by an insulation layer 11. An anode electrode 12 is formed extending from on the front surface of the first substrate 1 onto a P type region of the LED die 8 along the circumference of the insulation layer 11. Wiring layers 18 electrically connected to the cathode electrode 10 and the anode electrode 12 are formed on the side surface of the first substrate 1 therealong. The wiring layers 18 extend onto the back surface of the first substrate 1. Conductive terminals 22 electrically connected to the wiring layers 18 through electrode connection layers 20 are formed on the back surface of the first substrate 1.