Semiconductor Package Warpage Control Layer Grounding Layout
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Solution Overview
Problem
Semiconductor packages face warpage issues due to materials with different coefficients of thermal expansion, which can lead to deformation during heating and cooling, necessitating effective warpage control.
Innovation Solution
Incorporating a warpage control layer within the semiconductor package structure, separated from the ground and signal connection patterns by molding, and connected via specific openings in the insulating layer to manage thermal expansion and reduce warpage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If materials with different coefficients of thermal expansion are used in the semiconductor package, then the package can achieve required functional performance, but warpage and deformation occur during heating and cooling
Solution Approach 1:
The patent introduces a warpage control layer with specific material properties (different CTE from surrounding materials) to actively compensate for thermal expansion differences. This layer's parameters are optimized to counteract warpage forces during temperature cycling, allowing the package to maintain both functional performance and dimensional stability.
Solution Approach 2:
The patent creates a composite structure by integrating a warpage control layer into the package assembly. This composite approach combines materials with different thermal expansion characteristics in a controlled configuration, where the warpage control layer specifically addresses thermal deformation while other materials provide electrical and functional performance.
2Shape
If additional vias are formed to ground the warpage control layer, then warpage control is improved, but manufacturing complexity and process steps increase
Solution Approach 1:
The patent merges the warpage control function with existing grounding structures by allowing the warpage control layer to be grounded through existing vias that also serve electrical connection purposes. This integration eliminates the need for separate dedicated grounding vias for the warpage control layer, reducing manufacturing complexity while maintaining effective warpage control.
Solution Approach 2:
The patent makes existing vias serve dual functions: both electrical connection and grounding of the warpage control layer. This multi-functionality approach eliminates redundant process steps while achieving both electrical performance and warpage control objectives simultaneously.
3Reliability
If the warpage control layer is separated from connection patterns by molding, then electrical isolation is achieved, but additional openings must be created in the insulating layer
Solution Approach 1:
The patent combines the formation of openings for electrical connections with the creation of openings for grounding the warpage control layer. By coordinating these opening formations to occur together during the same processing step, the patent reduces overall manufacturing complexity while achieving both electrical isolation and proper grounding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces warpage, improves electrical characteristics, and simplifies manufacturing by grounding the warpage control layer without forming additional vias, enhancing the integration density and signal characteristics of the semiconductor package.
Implementation Method 1
Materials included in the semiconductor package may have different coefficients of thermal expansion (CTEs), and differences in CTE may cause deformation or warpage of the semiconductor package during the heating and cooling of the semiconductor package
Data Source
AI summary
A semiconductor package includes a package substrate, first and second bumps on a lower surface of the package substrate, a semiconductor chip on an upper surface of the package substrate, first and second connection patterns on the upper surface of the package substrate, a molding on the upper surface of the package substrate and covering the semiconductor chip, a warpage control layer on the molding, an upper insulating layer on the warpage control layer, a first opening passing through the upper insulating layer and exposing an upper surface of the warpage control layer, a second opening overlapping the first opening in a top view, the second opening passing through the warpage control layer and exposing the first connection pattern, and a third opening passing through the upper insulating layer and exposing the second connection pattern.