Semiconductor Warpage Reduction via Silicon Encapsulant Ratio

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Solution Overview

Problem

Semiconductor devices face significant challenges with warpage due to thermal and mechanical stress, leading to misalignment of interconnect structures, joint defects, reduced reliability, and increased manufacturing costs, particularly during the handling and processing of thin substrates.

Innovation Solution

A method is introduced to reduce warpage by selecting an optimal ratio of encapsulant to semiconductor die and substrate materials, ensuring sufficient structural support while minimizing warpage, which involves depositing an encapsulant around the semiconductor die and substrate, and strategically removing a portion of the substrate to enhance stiffness and reduce thermal expansion mismatches.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If the substrate is made thinner to reduce device footprint, then the device size is reduced, but warpage increases due to reduced structural support

Engineering Contradiction:
Improvedevice footprintVSAvoidsubstrate warpage
Core Design Contradiction:
Volume of moving objectVSStability of the object's composition

Solution Approach 1:

The patent optimizes the thickness parameters of both the substrate and encapsulant to achieve a target silicon-to-encapsulant ratio. By precisely controlling these dimensional parameters, the device achieves reduced footprint while maintaining adequate structural support to minimize warpage during thermal processing.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a composite structure combining the substrate, semiconductor die, and encapsulant materials. By optimizing the ratio and composition of these materials, particularly the silicon-to-encapsulant ratio, the composite structure achieves balanced mechanical properties that reduce warpage while allowing thin substrate design.

Inventive Principle:
Principle #40Composite materials

2Stability of the object's composition

If more encapsulant is added to provide structural support, then warpage is reduced, but manufacturing cost and device volume increase

Engineering Contradiction:
Improvesubstrate warpageVSAvoidmanufacturing cost
Core Design Contradiction:
Stability of the object's compositionVSEase of manufacture

Solution Approach 1:

The patent establishes an optimized range for the silicon-to-encapsulant ratio that balances structural support with material usage. By maintaining this ratio within specific bounds, adequate warpage control is achieved without excessive encapsulant volume, thereby controlling manufacturing costs and device size.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent uses computational modeling and simulation to predict warpage behavior based on encapsulant volume and material properties. This virtual copying of the manufacturing process allows optimization of encapsulant quantity before actual production, reducing trial-and-error manufacturing and associated costs.

Inventive Principle:
Principle #26Copying

3Temperature

If the substrate is made thinner to improve heat dissipation, then thermal performance is improved, but handling difficulty and manufacturing complexity increase

Engineering Contradiction:
Improvethermal performanceVSAvoidmanufacturing process complexity
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The patent optimizes substrate thickness within a specific range that balances thermal performance with manufacturability. The thickness is reduced enough to improve heat dissipation but not so thin as to create excessive handling difficulties, achieving an optimal compromise point.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent incorporates temporary support structures and optimized packaging processes that are prepared in advance for handling thin substrates. These preliminary measures enable successful manufacturing of thin-substrate devices without requiring fundamental changes to the manufacturing infrastructure.

Inventive Principle:
Principle #10Preliminary action

4Stability of the object's composition

If substrate and encapsulant materials are changed to reduce thermal expansion mismatch, then warpage is reduced, but material compatibility and manufacturing complexity increase

Engineering Contradiction:
Improvethermal expansion mismatchVSAvoidmaterial compatibility
Core Design Contradiction:
Stability of the object's compositionVSAdaptability or versatility

Solution Approach 1:

The patent selects substrate and encapsulant materials with specific thermal expansion properties that are matched to minimize differential expansion. By carefully choosing materials whose thermal expansion coefficients are compatible, warpage from thermal cycling is reduced while maintaining material compatibility.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The patent creates a multi-material composite structure where the substrate, semiconductor die, and encapsulant are selected and combined to achieve overall thermal expansion compatibility. The composite design allows each material to contribute its strengths while the overall structure maintains dimensional stability across temperature ranges.

Inventive Principle:
Principle #40Composite materials

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach effectively minimizes warpage, improves the reliability of electrical connections, and reduces manufacturing costs by eliminating the need for temporary carriers, thereby enhancing the thermal performance and cost efficiency of semiconductor packages.

Implementation Method 1

warpage due to thermal and mechanical stress

Methodology Applied
Scientific EffectMechanical stress: Mechanical Force

Implementation Method 2

warpage due to thermal and mechanical stress

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS9184139B2Semiconductor device and method of reducing warpage using a silicon to encapsulant ratio
Publication Date: 2015.11.10 JCET SEMICON (SHAOXING) CO LTD
  • US9184139B2 patent drawing
  • US9184139B2 patent drawing
  • US9184139B2 patent drawing

AI summary

A semiconductor device has a substrate including a base substrate material and a plurality of conductive vias formed partially though the substrate. A plurality of semiconductor die including a base semiconductor material is disposed over the substrate. A ratio of an encapsulant to a quantity of the semiconductor die is determined for providing structural support for the semiconductor die. An encapsulant is deposited over the semiconductor die and substrate. An amount of the encapsulant is selected based on the determined ratio or based on a total amount of the base substrate material and base semiconductor material. Channels are formed in the encapsulant by removing a portion of the encapsulant in a peripheral region of the semiconductor die. Alternatively, a side surface of the semiconductor die is partially exposed with respect to the encapsulant. A portion of the base substrate material is removed to expose the conductive vias.