Semiconductor Washing Composition for Dry-Etch Residue Removal
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Solution Overview
Problem
Current compositions for semiconductor device manufacturing are inadequate in residue removability, particularly after dry etching, as they fail to effectively remove etching residues and ashing residues from substrates.
Innovation Solution
A composition comprising alcohol, an aprotic polar solvent, an azole compound, an alkanolamine, and water, with specific pH and concentration ranges, is used for substrate washing to enhance residue removability. The composition includes monoalcohols, polyhydric alcohols, dimethyl sulfoxide or sulfolane as solvents, and chelating agents to improve etching residue removal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional treatment liquids are used for washing substrates, then the washing process can be performed, but residue removability (particularly after dry etching) is insufficient
Solution Approach 1:
The patent changes the chemical parameters of the treatment liquid by specifying precise pH ranges (9.5-11.0), alcohol content (5-50%), and concentrations of specific components (azole compound: 0.01-5%, alkanolamine: 0.1-10%, aprotic polar solvent: 1-20%). These parameter optimizations resolve the contradiction by enabling effective residue removal while maintaining substrate integrity and anticorrosion properties.
Solution Approach 2:
The treatment liquid employs a composite formulation combining multiple functional components: alcohol (for solubility), aprotic polar solvent (for residue dissolution), azole compound (for metal layer protection and residue removal), alkanolamine (for pH control and chelation), and water. This composite approach simultaneously achieves superior residue removability and anticorrosion performance, resolving the technical contradiction.
2Manufacturing precision
If stronger washing agents are used to improve residue removal, then residue removability increases, but anticorrosion properties may be compromised
Solution Approach 1:
The azole compound acts as an intermediary that provides dual functionality: it facilitates residue removal through chelation with metal ions while simultaneously forming protective films on metal surfaces to prevent corrosion. This mediator resolves the contradiction by enabling strong cleaning action without substrate damage.
Solution Approach 2:
The patent optimizes the pH parameter to a specific range (9.5-11.0) that balances residue removal capability with substrate protection. This controlled alkaline environment enables effective cleaning while the presence of anticorrosive agents (azole compound and alkanolamine) prevents harmful corrosion effects, resolving the contradiction between cleaning strength and substrate safety.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The composition significantly improves residue removability after dry etching, providing excellent anticorrosion properties and efficient removal of etching and ashing residues, thereby enhancing the semiconductor device manufacturing process.
Implementation Method 1
an alkanolamine; and water... further comprising a component A selected from the group consisting of sulfolene and dipropyl sulfone... a mass ratio of a content of the azole compound to a content of the component A is 1.0×10³ to 1.0×10¹⁰
Implementation Method 2
alcohol; an aprotic polar solvent... the aprotic polar solvent includes at least one selected from the group consisting of dimethyl sulfoxide or sulfolane
Implementation Method 3
an azole compound... the azole compound includes at least one selected from the group consisting of 1,2,4-triazole, 1,2,3-triazole, 1H-tetrazole, 5-aminotetrazole, 1H-benzotriazole, tolyltriazole, 5-methyltriazole, carboxybenzotriazole, and 2,2′-[{(methyl-1H-benzotriazole-1-yl)methyl}imino]bisethanol
Data Source
AI summary
The present invention provides a composition for a semiconductor device, which is excellent in residue removability. In addition, the present invention provides a substrate washing method using the treatment liquid. The composition for a semiconductor device contains alcohol, an aprotic polar solvent, an azole compound, an alkanolamine, and water.