Semiconductor Package Waveguide Layout for High-Speed Signal Loss Control
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Solution Overview
Problem
The manufacturing of miniaturized semiconductor devices is complex, leading to issues such as poor structural configuration and delamination, resulting in significant yield loss and increased costs due to the challenges in integrating multiple chips with high communication speed requirements.
Innovation Solution
A semiconductor structure and method involving a substrate with an interconnect structure, dielectric layer, conductive members, and a waveguide that converts electrical signals to electromagnetic signals for high-speed transmission, achieving data transfer rates greater than 10 gigabits per second with minimized energy loss.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If multiple chips are integrated into a single semiconductor device using CoWoS operation, then functionality and integrated circuitry are increased, but manufacturing complexity increases leading to poor structural configuration and delamination
Solution Approach 1:
The patent divides the semiconductor device into multiple stacked layers (first substrate, second substrate, intermediate layer) with distinct functional regions. Each layer can be manufactured and tested independently before assembly, reducing overall manufacturing complexity while maintaining high functionality through vertical integration.
Solution Approach 2:
The patent transitions from planar integration to three-dimensional stacking architecture. By arranging substrates vertically rather than horizontally, the device achieves higher functionality and circuit density without proportionally increasing manufacturing complexity, as each layer can be processed using standard planar techniques before stacking.
2Volume of moving object
If the semiconductor device is miniaturized, then device size is reduced, but manufacturing operations become more complicated causing yield loss
Solution Approach 1:
The patent segments the miniaturized device into modular stacked layers that can be manufactured at larger scales independently, then assembled into the final compact form. This allows standard manufacturing processes to be used for each layer while achieving miniaturization through vertical stacking, rather than requiring complex single-step miniaturization processes.
Solution Approach 2:
The patent implements a nested structure where smaller functional components are integrated within larger substrate layers, which are then stacked together. This nested architecture enables miniaturization while maintaining manufacturability, as each nested layer can be fabricated using conventional processes before being assembled into the compact final device.
3Speed
If signal transmission speed is increased to exceed 10 gigabits per second, then data transfer performance is improved, but energy loss increases
Solution Approach 1:
The patent introduces an intermediate layer with optimized dielectric materials and conductive structures between signal transmission paths. This intermediate structure acts as a mediator that reduces signal attenuation and energy loss during high-speed transmission, enabling speeds exceeding 10 gigabits per second while minimizing energy dissipation through controlled impedance matching and reduced parasitic effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enables ultra-high speed signal transmission exceeding 100 gigabits per second and high frequency operations, improving the performance and yield of semiconductor devices by addressing the complexity and integration challenges in miniaturized manufacturing.
Implementation Method 1
a waveguide that converts electrical signals to electromagnetic signals for high-speed transmission
Data Source
AI summary
A semiconductor structure includes: a substrate; a first dielectric layer over the substrate; a waveguide over the first dielectric layer; a second dielectric layer over the first dielectric layer and laterally surrounding the waveguide; a first conductive member and a second conductive member over the second dielectric layer and the waveguide, the first conductive member and the second conductive member being in contact with the waveguide; a conductive bump on one side of the substrate and electrically connected to the first conductive member or the second conductive member; and a conductive via extending through the substrate and electrically connecting the conductive bump to the first conductive member or the second conductive member. The waveguide is configured to transmit an electromagnetic signal between the first conductive member and the second conductive member.