Semiconductor Device Wavelength Control via Quantum-Confined Stark Effect
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Solution Overview
Problem
Conventional light-emitting diodes face challenges in generating wavelength-converted radiation with a small full width at half maximum and a wavelength that is heavily dependent on operating current and temperature.
Innovation Solution
A semiconductor device with a first semiconductor layer sequence and a second semiconductor layer sequence, where the second sequence includes a quantum well structure to generate incoherent radiation by absorbing the first wavelength, allowing for electrical field adjustment to compensate for current and temperature effects, thereby controlling the wavelength of the converted radiation through the quantum-confined Stark effect.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wavelength conversion is performed using conventional luminescent materials, then radiation of a second wavelength is generated from radiation of a first wavelength, but the spectral full width at half maximum becomes relatively large (approximately 100 nm)
Solution Approach 1:
The device is divided into two separate semiconductor layer sequences: a first sequence for generating radiation at the first wavelength and a second sequence containing a quantum well structure for wavelength conversion. This segmentation allows each component to be optimized independently, achieving narrow spectral width through the quantum well structure while maintaining overall device functionality.
Solution Approach 2:
The patent employs a composite structure combining conventional semiconductor materials with quantum well structures. The quantum well structure, with its confined carrier states, provides sharp emission lines and narrow spectral width, while the overall composite device maintains the wavelength conversion functionality. The combination of these materials and structures resolves the contradiction between achieving narrow spectral width and maintaining device simplicity.
2Productivity
If operating current and temperature increase, then more radiation is generated, but the wavelength of the converted radiation becomes heavily dependent on these parameters
Solution Approach 1:
The patent introduces dynamic control through a third electrode that applies an electrical field to the quantum well structure. This electrical field can dynamically adjust the energy levels and wavelength of the converted radiation, compensating for shifts caused by changes in operating current and temperature. The system transitions from a static wavelength conversion process to a dynamically controllable one, maintaining wavelength stability despite variations in operating conditions.
Solution Approach 2:
The patent changes the electrical field parameter applied to the quantum well structure to compensate for wavelength shifts. By adjusting the strength and polarity of the electrical field through the third electrode, the system counteracts the effects of temperature and current variations on the conversion wavelength, thereby stabilizing the output radiation wavelength while maintaining high productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves wavelength-converted radiation with reduced spectral width and minimized dependence on operating current and temperature, enhancing efficiency and stability.
Implementation Method 1
The quantum well structure is designed to generate incoherent radiation of a second wavelength by absorbing the radiation of the first wavelength
Implementation Method 2
The quantum well structure is designed to generate incoherent radiation of a second wavelength by absorbing the radiation of the first wavelength, in particular in the quantum well structure
Implementation Method 3
The wavelength of the converted radiation can be adapted e.g. by distorting the energy bands in the quantum layer structure as a result of the quantum-confined Stark effect (QCSE). The QCSE describes the displacement and deformation of the wave functions in quantum layers under the effect of an external electrical field
Data Source
AI summary
The invention describes a radiation-emitting semiconductor component (100) having a first semiconductor layer sequence (10) which is designed to generate radiation of a first wavelength, a second semiconductor layer sequence (20), a first electrode area (1) and a second electrode area (2). It is provided that the second semiconductor layer sequence (20) has a quantum pot structure (21) with a quantum layer structure (22) and a barrier layer structure (23) and is designed to generate incoherent radiation of a second wavelength by means of absorption of the radiation of the first wavelength, and an electric field can be generated in the second semiconductor layer sequence (20) by the first electrode area (1) and the second electrode area (2).