Semiconductor Well Structure for Higher Breakdown Voltage
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Solution Overview
Problem
Existing semiconductor devices struggle to achieve high breakdown voltage characteristics necessary for high-power applications such as power amplifiers and radio frequency amplifiers, limiting their performance and functionality.
Innovation Solution
Incorporating depletion regions and specific layer configurations within the semiconductor devices, including n-type and p-type wells, deep n-type wells, and shallow trench isolation structures, to enhance breakdown voltage capabilities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional semiconductor device structures are used, then manufacturing is simpler, but breakdown voltage is insufficient for high-power applications
Solution Approach 1:
The device structure is segmented into multiple functional regions including a first depletion region with first doping concentration and a second depletion region with second doping concentration. This segmentation allows each region to contribute differently to the overall breakdown voltage, enabling higher voltage handling capability while maintaining manageable structural complexity through systematic division of functions.
Solution Approach 2:
Different regions of the device are assigned different doping concentrations and material compositions optimized for their specific functions. The first depletion region has higher doping concentration for one function while the second depletion region has lower doping concentration for another function, allowing local optimization of electrical characteristics to achieve high breakdown voltage without uniformly increasing complexity throughout the entire device.
2Reliability
If depletion regions with specific doping concentrations are incorporated, then breakdown voltage increases, but manufacturing precision requirements increase
Solution Approach 1:
The invention specifies particular doping concentration ranges for different depletion regions (first doping concentration and second doping concentration) to achieve the desired breakdown voltage characteristics. By defining specific parameter ranges rather than single values, the design provides manufacturing flexibility while still achieving the required electrical performance, balancing breakdown voltage improvement with manufacturability.
3Reliability
If multiple well structures and isolation structures are added, then breakdown voltage characteristics improve, but device complexity increases
Solution Approach 1:
The depletion regions and well structures serve multiple functions simultaneously: they establish electrical breakdown characteristics, provide charge storage capabilities, and define active device regions. This multi-functionality reduces the need for separate dedicated structures, allowing the device to achieve high breakdown voltage without proportionally increasing overall structural complexity.
Solution Approach 2:
The device structure employs nested configurations where depletion regions are positioned within and around well structures, and isolation structures are integrated into the overall architecture. This nesting allows multiple functional elements to occupy overlapping or adjacent spaces, achieving high breakdown voltage characteristics while minimizing the total device footprint and reducing apparent structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed semiconductor device structures exhibit increased breakdown voltage by 3-6 volts, improving performance in applications like wireless charging and reducing on-resistance, thus enhancing operational efficiency.
Implementation Method 1
a first depletion region configured to increase a breakdown voltage of the semiconductor device
Implementation Method 2
semiconductor device structures that can be used to provide increased breakdown voltage characteristics
Implementation Method 3
n-type and p-type wells, deep n-type wells
Implementation Method 4
n-type layer disposed at least partially under the p-type well and the n-type layer is configured to increase the breakdown voltage of the semiconductor device
Data Source
AI summary
Semiconductor devices with increased breakdown voltage characteristics for use in a variety of suitable applications. An example semiconductor device having increased breakdown voltage characteristics includes a substrate having a p-type well, an n-type well, an n-type layer, and a depletion region and a gate disposed over the p-type well, the depletion region, and the n-type layer. The depletion region and the n-type layer are disposed between the p-type well and the n-type well and the depletion region is disposed between the p-type well and the n-type layer.