Semiconductor Wire Bonding Insulating Barrier
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Solution Overview
Problem
Conventional wire bonds in semiconductor devices are limited in length and prone to shorting due to 'wire bond sweep' when encapsulated, especially when bond pads are centrally located, leading to malfunction or failure as the size of semiconductor devices decreases and complexity increases.
Innovation Solution
Incorporating electrically insulating materials on the semiconductor die's active surface proximate to the lateral edges, these materials extend beyond the edges and are configured to prevent wire bonds from contacting each other or the active surface, allowing for longer wire bonds without shorting, using high viscosity epoxy or capillary underfill materials to maintain position and prevent displacement during encapsulation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If wire bonds are extended beyond conventional length limits to reach centrally located bond pads, then the adaptability and versatility of semiconductor device configurations is improved, but the likelihood of wire bond sweep causing shorts to other wire bonds or to the semiconductor die increases
Solution Approach 1:
A non-conductive material is introduced as an intermediary between the wire bonds and the semiconductor die. This material is applied to the active surface of the semiconductor die and extends beyond the periphery, creating a physical barrier that prevents wire bonds from contacting the die or other wire bonds during encapsulation, thereby resolving the shorting issue while allowing extended wire bond lengths
2Area of stationary object
If wire bonds are positioned closer together to reduce device size, then the compactness and integration density of the semiconductor device is improved, but the risk of wire bond sweep causing contacts between adjacent wire bonds increases
Solution Approach 1:
The non-conductive material serves as a mediator that fills the space between closely spaced wire bonds and extends beyond the die periphery. This creates a protective barrier that maintains wire bond separation during encapsulation, enabling closer wire bond spacing without increasing shorting risk
3Object-affected harmful factors
If encapsulation material is applied to protect wire bonds and semiconductor die, then the environmental protection and mechanical stability of the device is improved, but the wire bond sweep phenomenon causes displacement and deformation of wire bonds leading to shorts
Solution Approach 1:
The non-conductive material is applied to the semiconductor die active surface before encapsulation. This preliminary action creates a protective barrier that prevents the encapsulation material from causing wire bond sweep, thereby maintaining wire bond positional stability while still providing environmental protection through encapsulation
4Reliability
If conventional wire bond length limits are imposed to prevent shorting, then the reliability against shorts is maintained, but the ability to connect centrally located bond pads is lost
Solution Approach 1:
The non-conductive material acts as a mediator that enables extended wire bond lengths by providing a protective barrier against shorting. This allows wire bonds to extend beyond conventional length limits to reach centrally located bond pads while maintaining electrical isolation through the insulating material
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively extends wire bond length beyond conventional limits while reducing the likelihood of shorting, ensuring reliable electrical connections and device functionality even with central bond pads, by embedding wire bonds within insulating materials and maintaining their position during encapsulation.
Implementation Method 1
using high viscosity epoxy or capillary underfill materials to maintain position and prevent displacement during encapsulation
Implementation Method 2
using high viscosity epoxy or capillary underfill materials to maintain position and prevent displacement during encapsulation
Data Source
AI summary
Semiconductor devices may include a substrate and a semiconductor die on the substrate. The semiconductor die may include an active surface and a lateral edge at a periphery of the active surface. An electrically insulating material may be located on the active surface proximate the lateral edge. The electrically insulating material may be distinct from any other material located on the active surface. A wire bond may extend from the active surface, over the electrically insulating material, to the substrate. Methods of making semiconductor devices may involve positioning an electrically insulating material on an active surface of a semiconductor die proximate a lateral edge at a periphery of an active surface. After positioning the electrically insulating material on the active surface, a wire bond extending from the active surface, over the electrically insulating material, to the substrate may be formed.