3D Semiconductor Wire Contact Structure for Reliable Bonding
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The operational reliability of three-dimensional semiconductor devices deteriorates as the number of stacking levels increases, affecting their degree of integration and performance.
Innovation Solution
A semiconductor device design featuring a first insulating layer with recesses exposing wire contacts, a bonding wire connected to these contacts, and a second insulating layer filling the recesses, with interposition parts between the wire contacts to enhance integration and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If the number of stacking levels for memory cells is increased to improve degree of integration, then the area occupied by memory cells on substrate is reduced, but the operational reliability of the three-dimensional semiconductor device deteriorates
Solution Approach 1:
The patent transitions from planar wire contact structures to three-dimensional protruding wire contact structures that extend vertically from the insulating layer. This dimensional change allows wire contacts to reach bonding wires at different heights, enabling reliable electrical connection in high-stack configurations while maintaining reduced substrate area occupancy.
Solution Approach 2:
The wire contacts are formed with protrusions that extend beyond the insulating layer surface before bonding wire placement. This preliminary structural preparation ensures that wire contacts are already positioned to make reliable contact with bonding wires, preventing connection failures that would occur with increased stacking levels.
2Reliability
If wire contacts are made to protrude from the insulating layer to improve connection reliability, then contact with bonding wire is enhanced, but the wire contacts become more exposed and susceptible to damage
Solution Approach 1:
The insulating layer is selectively recessed only in specific regions where wire contacts need to be exposed for bonding wire connection, while other regions maintain full insulating layer coverage. This localized modification allows wire contacts to protrude only where necessary for electrical connection, minimizing their exposure to damaging factors while maintaining connection reliability.
Solution Approach 2:
Bonding wires serve as intermediary elements that connect to the protruding wire contacts through the recessed insulating layer. This intermediary structure allows electrical connection to be established at a protected interface point, reducing direct exposure of wire contacts to environmental damage while maintaining reliable electrical pathways.
3Reliability
If wire contacts are exposed by removing insulating layer to improve bonding wire connection, then electrical connection is enhanced, but the wire contacts are more vulnerable to contamination and damage
Solution Approach 1:
The insulating layer is removed only in localized recess regions where wire contacts need to be accessed for bonding, while the majority of the insulating layer structure remains intact. This selective removal minimizes wire contact exposure to contamination and damage while maintaining necessary electrical connection pathways.
Solution Approach 2:
The recessed insulating layer structure is designed to provide protective coverage around wire contacts while allowing controlled exposure at specific bonding interfaces. This pre-configured protective structure cushions wire contacts from contamination and mechanical damage before bonding operations occur.
Data Source
AI summary
A semiconductor device includes a first insulating layer, wire contacts spaced apart from each other by the first insulating layer, and a bonding wire connected to the wire contacts. Each of the wire contacts includes a base part in the first insulating layer and a protrusion part protruding from inside to outside the first insulating layer. The protrusion parts of the wire contacts are in contact with the bonding wire.