Semiconductor Package Wire Structure for Dielectric Isolation
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Solution Overview
Problem
Conventional semiconductor devices with multiple elements in a single package face challenges in maintaining dielectric strength due to differences in source voltage between conductive paths, leading to increased costs and potential reliability issues.
Innovation Solution
A semiconductor device configuration that includes a first semiconductor element, a second semiconductor element acting as an insulator, and specific wire compositions with core and surface layers to ensure electrical insulation and bonding strength, utilizing metals like gold, copper, and palladium to reduce costs while maintaining required dielectric strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional wire materials are used for connection to the insulating element, then manufacturing simplicity is maintained, but dielectric strength is significantly decreased
Solution Approach 1:
The patent uses a composite wire structure with a first metal core and a second metal barrier layer. This composite material approach maintains manufacturing simplicity by using standard metallization processes while achieving the required dielectric strength through the protective barrier metal layer
Solution Approach 2:
The patent changes the material parameter of the wire by introducing a barrier metal layer with specific dielectric properties. This parameter change (adding the second metal layer) significantly improves dielectric strength while maintaining compatibility with existing manufacturing processes
Data Source
AI summary
A semiconductor device includes first and second semiconductor elements, and first and second circuits at different potentials. The second semiconductor element, electrically connected to the first semiconductor element, relays mutual signals between the first and the second circuits, while insulating them. The semiconductor device further includes a first terminal lead electrically connected to the first semiconductor element, a first wire connected to the first and the second semiconductor elements, and a second wire connected to the first semiconductor element and the first terminal lead. The first wire contains a first metal. The second wire includes a first core containing a second metal, and a first surface layer containing a third metal and covering the first core. The second metal has a smaller atomic number than that of the first metal. The third metal has a greater bonding strength with respect to the first terminal lead than the second metal.