Semiconductor Wire Two-Layer Structure Preventing Breakage
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Solution Overview
Problem
The existing semiconductor device manufacturing process faces challenges with wire breakage at intersection points due to steep edges and insufficient coverage by interlayer insulating films, leading to defects and reduced yield, especially in active matrix liquid crystal display devices.
Innovation Solution
A method is introduced where a photo mask or reticle with a diffraction grating pattern or auxiliary semi-translucent film is used in photolithography to form wires, creating a two-layer structure with a wider first wire and narrower second wire at intersection points, ensuring better coverage and preventing breakage by relieving the steep step and improving junction properties.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If the upper wire is thickened to prevent breaking at intersection points, then wire strength is improved, but unevenness of the integrated circuit increases
Solution Approach 1:
The lower wire is segmented into two layers: a first wire layer and a second wire layer. The first wire layer has a wider width than the second wire layer, creating a stepped structure that prevents wire breaking while maintaining overall circuit planarity. This segmentation allows the wire to have increased effective thickness for strength without proportionally increasing the overall height variation in the circuit.
Solution Approach 2:
Instead of simply increasing the wire thickness in the vertical dimension, the invention transitions to a two-layer horizontal structure where the first wire layer extends wider than the second wire layer. This dimensional change from a single thick layer to a multi-layer stepped structure provides the necessary mechanical support while maintaining better surface uniformity for subsequent processing layers.
2Reliability
If the upper wire is thickened to prevent breaking, then reliability is improved, but manufacturing complexity increases
Solution Approach 1:
The first wire layer is formed and patterned before the second wire layer is deposited and patterned. This preliminary action of creating the wider first layer provides a robust foundation that prevents breaking in subsequent processing steps, while allowing the second layer to be formed with standard lithography techniques without requiring additional complex manufacturing steps.
3Ease of manufacture
If a single-layer wire structure is used, then manufacturing process is simple, but wire breaking occurs at intersection points
Solution Approach 1:
The wire structure is divided into two distinct layers with different widths. The first wire layer has a wider width that provides mechanical support and prevents breaking at intersection points, while the second wire layer maintains the required circuit connectivity. This segmentation resolves the reliability issue without significantly complicating the manufacturing process, as both layers can be formed using standard deposition and lithography techniques.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces wire breakage and enhances the reliability and integration density of semiconductor devices without increasing the number of manufacturing steps, improving the overall yield and performance of integrated circuits.
Implementation Method 1
a photo mask or a reticle each of which is provided with a diffraction grating pattern
Implementation Method 2
auxiliary pattern formed of a semi-translucent film having a light intensity reducing function
Data Source
AI summary
It is an object of the present invention to provide a method for preventing a breaking and poor contact, without increasing the number of steps, thereby forming an integrated circuit with high driving performance and reliability. The present invention applies a photo mask or a reticle each of which is provided with a diffraction grating pattern or with an auxiliary pattern formed of a semi-translucent film having a light intensity reducing function to a photolithography step for forming wires in an overlapping portion of wires. And a conductive film to serve as a lower wire of a two-layer structure is formed, and then, a resist pattern is formed so that a first layer of the lower wire and a second layer narrower than the first layer are formed for relieving a steep step.