Semiconductor Wiring Air Gaps Reduce Signal Delay
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Solution Overview
Problem
Highly integrated semiconductor devices face signal line delays due to high capacitance between wiring layers, which existing technologies fail to adequately address without compromising structural stability by forming sufficient air gaps.
Innovation Solution
A semiconductor device with air gaps adjoining sidewalls of wiring layers, fabricated by forming a thermally degradable material layer and a porous insulating layer, where the thermally degradable material is partially removed to create air gaps, increasing the proportion of air gaps while maintaining structural stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an insulating layer with high dielectric constant is used to separate wiring layers, then the insulation between wiring layers is improved, but the capacitance between wiring layers increases causing signal line delays
Solution Approach 1:
The patent introduces air gaps (porous structure) between wiring layers to reduce dielectric constant and capacitance. The air gaps are formed by removing portions of the insulating layer, creating a structure where air (low dielectric constant) replaces solid insulating material, thereby reducing capacitance and signal delays while maintaining insulation functionality.
Solution Approach 2:
The patent extracts portions of the insulating layer to form air gaps between wiring layers. By removing material rather than adding it, the dielectric constant is reduced and capacitance is lowered, addressing the signal delay problem while preserving the essential insulation function through the remaining insulating structures.
2Loss of energy
If portions of insulating layer are removed to form air gaps, then the capacitance between wiring layers is decreased, but the proportion of air gaps is very low and structural stability is compromised
Solution Approach 1:
The patent applies local quality by creating air gaps at specific locations between wiring layers rather than uniformly throughout. The air gaps are positioned strategically to maximize capacitance reduction while maintaining structural integrity in other regions. Different regions have different properties: air gaps for low capacitance, and remaining insulating layers for structural support.
Solution Approach 2:
The patent creates a composite structure combining air gaps (low dielectric constant) with remaining insulating layer portions (structural support). This composite approach allows the device to benefit from both the low capacitance of air and the structural stability of solid insulating materials, resolving the contradiction between energy loss reduction and stability maintenance.
3Quantity of substance
If an insulating layer is formed from polymer material and thermally degraded to form air gaps, then the proportion of air gaps is increased, but other material layers collapse and structural stability decreases
Solution Approach 1:
The patent applies preliminary action by forming a support structure (refractory material layer) before creating air gaps. This support layer is prepared in advance to prevent collapse during the air gap formation process. The support structure is positioned to provide mechanical strength before the insulating layer is thermally degraded, ensuring structural stability is maintained even as air gap proportion increases.
Solution Approach 2:
The patent implements beforehand cushioning by introducing a refractory material layer that acts as a support structure prior to air gap formation. This cushioning layer prevents collapse of other material layers during thermal degradation, providing structural stability while allowing high proportion of air gaps to be formed. The support structure is designed to withstand the thermal process and maintain device integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The approach reduces capacitance between wiring layers, preventing signal delays and ensuring structural stability by increasing the proportion of air gaps without causing material collapse.
Implementation Method 1
heating portions of the thermally degradable material layer by applying light radiation to the first and second wiring layers
Implementation Method 2
thermally degradable material layer... heating portions of the thermally degradable material layer... such that a first air gap is formed
Data Source
AI summary
A semiconductor device is provided. A unit wiring level of the semiconductor device includes; first and second wiring layers spaced apart from each other on a support layer, a large space formed adjacent to the first wiring layer and including a first air gap of predetermined width as measured from a sidewall of the first wiring layer, and a portion of a thermally degradable material layer formed on the support layer, small space formed between the first and second wiring layers, wherein the small space is smaller than the large space, and a second air gap at least partially fills the small space, and a porous insulating layer formed on the first and second air gaps.