Semiconductor Wiring Structures with Asymmetric Width Profiles

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Solution Overview

Problem

As semiconductor devices continue to downscale, there is a challenge in achieving stable and reliable connections between wiring structures while maintaining high integration and low power consumption, which existing technologies have not adequately addressed.

Innovation Solution

The semiconductor device incorporates a first and second wiring structure with specific width variations and materials, along with an interlayer insulating film and capping films, to form a stable and reliable connection, using materials like copper and ruthenium, and forming the structures through processes such as damascene and dual damascene processes.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the feature size of semiconductor devices is decreased to achieve higher integration and lower power consumption, then integration density and power efficiency are improved, but connection stability and reliability between wiring structures deteriorate

Engineering Contradiction:
Improveintegration densityVSAvoidconnection stability
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

The patent applies local quality by creating different width profiles for different wiring structures. Specifically, the first wiring structure has a width that increases from top to bottom, while the second wiring structure has a width that decreases from top to bottom. This localized variation in geometric properties allows each wiring structure to be optimized for its specific function, maintaining connection stability even as overall feature sizes are reduced for higher integration.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The patent employs asymmetry by designing wiring structures with non-uniform width profiles. The first wiring structure exhibits an asymmetric expansion from top to bottom, while the second wiring structure shows asymmetric contraction. This asymmetric design breaks the conventional uniform width approach, enabling improved mechanical interlocking and electrical connection stability at scaled dimensions.

Inventive Principle:
Principle #4Asymmetry

2Reliability

If different materials are used for first and second wiring structures to improve material properties and connection reliability, then connection stability is improved, but manufacturing complexity increases

Engineering Contradiction:
Improveconnection reliabilityVSAvoidmanufacturing complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies segmentation by dividing the wiring system into distinct first and second wiring structures with different materials and geometric profiles. The first wiring structure uses a first material with specific properties, while the second wiring structure uses a second material with different properties. This segmentation allows each material to be optimized for its specific role, improving overall connection reliability while maintaining manageable manufacturing complexity through systematic process design.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS20230178477A1Semiconductor device and method for fabricating the semiconductor device
Publication Date: 2023.06.08 SAMSUNG ELECTRONICS CO LTD
  • US20230178477A1 patent drawing
  • US20230178477A1 patent drawing
  • US20230178477A1 patent drawing

AI summary

A semiconductor device is provided. The semiconductor device comprises a first wiring structure which includes a first material, and has a first width on a lowest surface in a first direction and a second wiring structure which includes a second material, is spaced apart from the first wiring structure in the first direction, and has a second width smaller than the first width on a lowest surface in the first direction, wherein a highest surface of the first wiring structure has a third width smaller than the first width in the first direction, and a highest surface of the second wiring structure has a fourth width smaller than the second width in the first direction.