Semiconductor Wiring Layout for Balanced Current and Lower Shear
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Solution Overview
Problem
Existing semiconductor devices face reliability issues due to wiring elements detaching from semiconductor elements, often caused by uneven current flow leading to different shear forces on connections.
Innovation Solution
A semiconductor arrangement with a substrate having a structured metallization with line sections, where the semiconductor element is connected to one line section, and wiring elements are connected to opposite line sections, configured to distribute current evenly on diagonally opposite sides, reducing shear forces and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wiring elements are used to connect the semiconductor element to the substrate, then electrical connection is achieved, but the wiring elements may detach during operation leading to device failure
Solution Approach 1:
The substrate metallization is segmented into multiple line sections (first, second, third line sections) that are electrically insulated from one another. This segmentation allows the current path to be distributed across multiple separated conductive paths, reducing the stress concentration on any single wiring element connection point.
Solution Approach 2:
The current flow is redirected from a linear path through wiring elements to a two-dimensional distribution across the substrate metallization plane. The second and third line sections are arranged on opposite sides of the semiconductor element, creating a spatial distribution that reduces mechanical stress on the wiring elements.
2Reliability
If current flows through wiring elements to connect opposite sides of the semiconductor element, then electrical function is achieved, but uneven current distribution creates different shear forces on connections
Solution Approach 1:
Different line sections of the substrate metallization are positioned at specific locations (opposite sides of the semiconductor element) to create localized current entry and exit points. This local quality distribution ensures that current enters and exits at optimally positioned locations, balancing the shear forces on the wiring element connections.
Solution Approach 2:
The substrate metallization is designed to create equipotential regions that balance the electrical potential distribution across the wiring element connections. By arranging line sections on opposite sides, the potential difference is distributed symmetrically, reducing uneven current flow and corresponding shear forces.
Data Source
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AI summary
The invention relates to a semiconductor arrangement (2) with a first semiconductor element (4) and a substrate (6), wherein the substrate (6) has a substrate metallization (14) with line sections (12, 16, 18, 42, 44) arranged in an electrically insulated manner from one another, wherein the first semiconductor element (4) is connected, in particular by a material bond, to a first line section (12) of the substrate metallization (14), wherein the first semiconductor element (4) has a contact surface (8) on a side facing away from the substrate (6), wherein a second line section (16) and a third line section (18) of the substrate metallization (14) are arranged on opposite sides of the first semiconductor element (4), wherein wiring elements (22, 24, 32, 34, 36, 38) are each electrically and mechanically connected to the second line section (16), the contact surface (8) of the first semiconductor element (4) and the third line section (18) are connected.In order to achieve improved reliability, it is proposed that the second line section (16) and the third line section (18) are configured such that a current (IL) flowing between the second line section (16) and the third line section (18) via the wiring elements (22, 24, 32, 34, 36, 38) during operation of the semiconductor arrangement (2) flows in or out on one side on diagonally opposite sides.