Semiconductor Wiring Board Layout for High-Current Series Connection
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Solution Overview
Problem
Semiconductor devices used in high-performance electronic devices face limitations in achieving larger current capacities due to conventional connection methods that restrict the allowable current in the conduction path.
Innovation Solution
A semiconductor device configuration that includes a wiring board with obverse and reverse surface wiring layers connected by metal members inserted through the base, allowing for increased current flow between semiconductor elements by reducing internal inductance and enhancing heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If conventional connection methods are used to connect semiconductor elements, then the device structure is simple, but the allowable current in the conduction path is limited
Solution Approach 1:
The patent transitions from planar wiring connections to three-dimensional stacked connections by inserting metal members vertically through the wiring board base. This dimensional change allows current paths to extend through the thickness direction, increasing current capacity without expanding the device footprint, thereby resolving the contradiction between allowable current and device complexity.
Solution Approach 2:
The patent employs composite material structures including metal members (such as tungsten or copper) inserted into the wiring board base, combined with conductive adhesive layers. This composite approach creates high-current-capacity conduction paths that overcome the limitations of conventional single-material wiring, enabling larger allowable current while maintaining structural integrity.
2Quantity of substance
If metal members are inserted in the base to electrically connect wiring layers, then current capacity increases, but manufacturing complexity increases
Solution Approach 1:
The patent performs preliminary actions by pre-forming holes in the wiring board base at designated positions before inserting metal members. This preparatory step organizes the manufacturing sequence, allowing subsequent metal insertion and conductive adhesive application to proceed systematically, thereby reducing overall manufacturing complexity despite the added manufacturing stages.
Solution Approach 2:
The patent introduces conductive adhesive as an intermediary material between the metal members and the wiring board base. This intermediary enables reliable electrical and mechanical connection while accommodating manufacturing tolerances, simplifying the assembly process and improving ease of manufacture compared to direct metal-to-base bonding.
3Power
If semiconductor elements are connected in series with increased current capacity, then power handling ability improves, but internal inductance increases
Solution Approach 1:
The patent reduces internal inductance by transitioning current paths from lateral flow within wiring layers to vertical flow through metal members inserted in the thickness direction. This dimensional change shortens the current loop area and reduces parasitic inductance, enabling high power handling while maintaining low internal inductance for improved reliability.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves higher current capacity and reduced internal inductance, enabling efficient operation in high-power applications while improving heat management and reducing the device's size and thermal stress.
Implementation Method 1
a metal member inserted in the base to electrically connect the obverse surface wiring layer and the reverse surface wiring layer, wherein the first semiconductor element and the second semiconductor element are connected in series to each other by connecting the second electrode and the fourth electrode, and the metal member is in a conduction path between the second electrode and the fourth electrode
Implementation Method 2
allowing for increased current flow between semiconductor elements by reducing internal inductance and enhancing heat dissipation
Data Source
AI summary
A semiconductor device includes a first and a second semiconductor elements and a wiring board. The first semiconductor element has a first electrode, a second electrode and a third electrode, and current flow between the first electrode and the second electrode is on-off controlled. The second semiconductor element has a fourth electrode, a fifth electrode and a sixth electrode, and current flow between the fourth electrode and the fifth electrode is on-off controlled. The wiring board includes a base, an obverse surface wiring layer, a reverse surface wiring layer, and a metal member inserted in the base to electrically connect the obverse surface wiring layer and the reverse surface wiring layer. The first semiconductor element and the second semiconductor element are connected in series by connecting the second electrode and the fourth electrode. The metal member is in a conduction path between the second electrode and the fourth electrode.