Semiconductor Wiring Member Thickness Profile for Bond Crack Relief
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Solution Overview
Problem
Existing semiconductor devices face issues with thermal expansion mismatch between semiconductor chips and wiring members, leading to stress and potential cracking in bonding materials due to differing linear expansion coefficients, particularly during power cycling.
Innovation Solution
The wiring member is designed with a thinner connecting portion where the first bonding portion and rising portion are connected, reducing stress and deformation by allowing the member to bend more easily, thereby minimizing crack formation in the bonding material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the wiring member has a uniform thickness throughout, then the structural strength and rigidity are maintained, but stress concentration and cracking occur in the bonding material due to thermal expansion mismatch
Solution Approach 1:
The wiring member employs varying thickness across different regions: a thinner first thickness in the connecting portion and a thicker second thickness in the rising and terminal portions. This local quality variation allows the connecting portion to flex and absorb thermal expansion stress, preventing bonding material cracking, while maintaining sufficient rigidity in other portions for structural support.
Solution Approach 2:
The patent changes the geometric parameter of the wiring member by varying its thickness. The thickness transitions from a first thickness in the connecting portion to a second thickness in other portions, creating a stress distribution optimization that prevents bonding material failure while maintaining overall structural integrity.
2Strength
If the connecting portion has a larger thickness, then the wiring member has higher structural strength, but stress and deformation increase in the bonding material leading to cracks
Solution Approach 1:
The wiring member employs varying thickness across different regions: a thinner first thickness in the connecting portion and a thicker second thickness in the rising and terminal portions. This local quality variation allows the connecting portion to flex and absorb thermal expansion stress, preventing bonding material cracking, while maintaining sufficient rigidity in other portions for structural support.
Solution Approach 2:
The patent changes the geometric parameter of the wiring member by varying its thickness. The thickness transitions from a first thickness in the connecting portion to a second thickness in other portions, creating a stress distribution optimization that prevents bonding material failure while maintaining overall structural integrity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design reduces stress and deformation in the bonding material, minimizing crack occurrence and damage to the emitter electrode, while maintaining electrical conductivity and corrosion resistance.
Implementation Method 1
a bonding portion, a rising portion, and a connecting portion, the bonding portion being bonded to the electrode via a bonding material
Data Source
AI summary
A semiconductor device, including: a semiconductor chip including an electrode on an upper surface thereof; and a wiring member including a bonding portion, a rising portion, and a connecting portion, the bonding portion being bonded to the electrode via a bonding material, the rising portion being of a shape of a flat plate and extending upward from the bonding portion, the connecting portion connecting the bonding portion to the rising portion. The rising portion includes a lower region connected to the connecting portion and an upper region located above the lower region. Both the lower region and the connecting portion have a first thickness, and the upper region has a second thickness that is larger than the first thickness.