Semiconductor Wiring Layer Corrosion Prevention via Nitrogen Plasma
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Solution Overview
Problem
Galvanic corrosion occurs on the electrode pads of semiconductor devices during the dicing process due to contact with water, leading to reduced bonding strength and poor electrical connections, which affects the reliability and appearance of the devices.
Innovation Solution
A manufacturing method involving the exposure of a wiring layer formed from an alloy with two or more metals having different standard electrode potentials, followed by a plasma process using a mixture gas of nitrogen and an inert gas, such as N2/Ar plasma, to irradiate the exposed surface and prevent galvanic corrosion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the electrode pad is exposed to water during the dicing process, then the dicing process can be performed, but galvanic corrosion occurs on the electrode pad surface
Solution Approach 1:
A protective film is formed on the electrode pad surface before the dicing process to prevent water contact. This preliminary protective measure ensures that when water is applied during dicing, the electrode pad is already protected from galvanic corrosion, maintaining bonding strength while enabling the dicing process to proceed
Solution Approach 2:
A protective film is introduced as an intermediary layer between the electrode pad and water during the dicing process. This film acts as a barrier that prevents direct contact between water and the metal surface, thereby eliminating the galvanic corrosion mechanism while allowing the dicing operation to continue
2Productivity
If the electrode pad is exposed to water during the dicing process, then the dicing process can be performed, but the appearance of the electrode pad deteriorates
Solution Approach 1:
A protective film is formed on the electrode pad surface before the dicing process to prevent water contact. This preliminary protective measure ensures that when water is applied during dicing, the electrode pad is already protected from corrosion, maintaining both bonding strength and surface appearance while enabling the dicing process to proceed
Solution Approach 2:
A protective film is introduced as an intermediary layer between the electrode pad and water during the dicing process. This film acts as a barrier that prevents direct contact between water and the metal surface, thereby eliminating the galvanic corrosion mechanism while allowing the dicing operation to continue
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively suppresses corrosion on the exposed surface of the wiring layer, enhancing the bonding strength and reliability of the electrical connections while maintaining a smooth surface, thus improving the overall performance and appearance of the semiconductor devices.
Implementation Method 1
performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer
Implementation Method 2
a nitride layer which is formed as the wiring layer is irradiated by plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen
Implementation Method 3
metal which forms the electrode pad is ionized due to electrolysis of the water
Data Source
AI summary
A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.


