Semiconductor Wiring Layer Corrosion Prevention via Nitrogen Plasma

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Solution Overview

Problem

Galvanic corrosion occurs on the electrode pads of semiconductor devices during the dicing process due to contact with water, leading to reduced bonding strength and poor electrical connections, which affects the reliability and appearance of the devices.

Innovation Solution

A manufacturing method involving the exposure of a wiring layer formed from an alloy with two or more metals having different standard electrode potentials, followed by a plasma process using a mixture gas of nitrogen and an inert gas, such as N2/Ar plasma, to irradiate the exposed surface and prevent galvanic corrosion.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If the electrode pad is exposed to water during the dicing process, then the dicing process can be performed, but galvanic corrosion occurs on the electrode pad surface

Engineering Contradiction:
Improvedicing processVSAvoidbonding strength
Core Design Contradiction:
ProductivityVSReliability

Solution Approach 1:

A protective film is formed on the electrode pad surface before the dicing process to prevent water contact. This preliminary protective measure ensures that when water is applied during dicing, the electrode pad is already protected from galvanic corrosion, maintaining bonding strength while enabling the dicing process to proceed

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

A protective film is introduced as an intermediary layer between the electrode pad and water during the dicing process. This film acts as a barrier that prevents direct contact between water and the metal surface, thereby eliminating the galvanic corrosion mechanism while allowing the dicing operation to continue

Inventive Principle:
Principle #24Intermediary (Mediator)

2Productivity

If the electrode pad is exposed to water during the dicing process, then the dicing process can be performed, but the appearance of the electrode pad deteriorates

Engineering Contradiction:
Improvedicing processVSAvoidsurface appearance
Core Design Contradiction:
ProductivityVSShape

Solution Approach 1:

A protective film is formed on the electrode pad surface before the dicing process to prevent water contact. This preliminary protective measure ensures that when water is applied during dicing, the electrode pad is already protected from corrosion, maintaining both bonding strength and surface appearance while enabling the dicing process to proceed

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

A protective film is introduced as an intermediary layer between the electrode pad and water during the dicing process. This film acts as a barrier that prevents direct contact between water and the metal surface, thereby eliminating the galvanic corrosion mechanism while allowing the dicing operation to continue

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively suppresses corrosion on the exposed surface of the wiring layer, enhancing the bonding strength and reliability of the electrical connections while maintaining a smooth surface, thus improving the overall performance and appearance of the semiconductor devices.

Implementation Method 1

performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer

Methodology Applied
Scientific EffectPlasma: Plasma

Implementation Method 2

a nitride layer which is formed as the wiring layer is irradiated by plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen

Methodology Applied
Scientific EffectNitriding: Nitriding

Implementation Method 3

metal which forms the electrode pad is ionized due to electrolysis of the water

Methodology Applied
Scientific EffectElectrolysis: Electrolysis

Data Source

PatentUS8786089B2Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
Publication Date: 2014.07.22 SONY SEMICON SOLUTIONS CORP
  • US8786089B2 patent drawing
  • US8786089B2 patent drawing
  • US8786089B2 patent drawing

AI summary

A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.