Semiconductor Wiring Layout for Creeping Discharge Isolation
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Solution Overview
Problem
Existing semiconductor devices face challenges in maintaining high dielectric strength during signal transmission between circuits with significantly different potentials, leading to potential 'creeping discharge' and reduced reliability due to the presence of singular points and differing reference potentials in the same layer.
Innovation Solution
The semiconductor device employs a multilayer wiring layout where a first wiring with a reference potential of approximately 800 V surrounds the upper inductor, and a second wiring with a reference potential of approximately 0 V surrounds the first wiring, both configured in a substantially quadrangular shape to minimize singular points and prevent 'creeping discharge', thereby enhancing dielectric strength.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a multilayer wiring structure with different reference potentials is used for signal transmission, then signal transmission between different potentials is enabled, but dielectric breakdown and creeping discharge occur due to singular points and potential differences in the same layer
Solution Approach 1:
A shielding wiring is introduced as an intermediary element between wirings with different reference potentials. This shielding wiring acts as a mediator that prevents direct electric field interaction between potentials, thereby eliminating creeping discharge paths and enhancing dielectric strength without compromising signal transmission capability.
Solution Approach 2:
The shielding wiring is configured to maintain equipotential conditions by being connected to a reference potential that creates uniform electric field distribution. This equipotential arrangement prevents potential differences from creating discharge paths, thereby preventing creeping discharge while allowing signal transmission between different potentials.
2Device complexity
If wirings with different reference potentials are placed in the same layer, then circuit complexity is reduced, but singular points are generated that cause creeping discharge
Solution Approach 1:
The shielding wiring serves as an intermediary barrier within the same layer, separating wirings with different reference potentials. This intermediary structure prevents direct interaction between conflicting potentials, eliminating singular points that would otherwise cause creeping discharge, while maintaining the simplified single-layer configuration.
3Reliability
If shielding wirings are added to prevent creeping discharge, then dielectric strength is improved, but device complexity increases
Solution Approach 1:
The shielding wiring is designed to maintain equipotential conditions throughout its structure, creating a uniform electric field environment. This equipotential design allows the shielding function to be achieved with a simple conductive structure connected to an appropriate reference potential, minimizing the increase in device complexity while effectively preventing creeping discharge.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively prevents 'creeping discharge' and enhances the dielectric strength between inductors with different reference potentials, improving the reliability and operational stability of the semiconductor device.
Implementation Method 1
a transformer (micro-isolator) that makes it possible to perform signal transmission in an electrically non-contact state by use of a pair of inductors which is inductively coupled with each other
Data Source
AI summary
An inductor to which a first potential is applied is surrounded by a first wiring connected with the inductor, and a pad connected with a second wiring, to which a second potential different from the first potential is applied, is disposed outside the second wiring such that the first wiring is surrounded by the second wiring.