Semiconductor Wiring Layout Using Segmented Dummy Sidewall Patterns
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Solution Overview
Problem
Existing side wall processing in semiconductor manufacturing faces challenges such as microloading effects, dishing effects, and short circuits due to variations in pattern density and spatial frequency, leading to reduced yield and complexity in forming small-scale semiconductor devices.
Innovation Solution
The method involves forming sacrificial layers with specific patterns in functioning and dummy areas, using these layers as masks to etch concavities, and filling conductive or insulating materials, while ensuring the sacrificial layers in dummy areas are separated into multiple components to minimize spatial frequency changes and prevent short circuits.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If side wall processing is used to form detailed patterns exceeding lithography resolution limits, then manufacturing precision is improved, but device complexity increases due to multiple sacrificial layers and processing steps
Solution Approach 1:
The patent divides the processing area into functioning areas and dummy areas, with separate sacrificial layer configurations for each. This segmentation allows independent optimization of pattern formation in functioning areas while using simplified dummy patterns in dummy areas to maintain etching uniformity, thereby reducing overall processing complexity while preserving manufacturing precision.
Solution Approach 2:
The patent performs preliminary pattern design of sacrificial layers before the actual etching process. By pre-configuring the sacrificial layers with specific patterns in functioning and dummy areas, the method prepares the structure in advance to achieve desired etching results and avoid microloading effects, reducing the need for complex real-time adjustments during processing.
2Manufacturing precision
If sacrificial layers are formed with high pattern density variations in dummy areas, then manufacturing precision is improved through better etching control, but object-generated harmful factors increase due to microloading effects and dishing effects
Solution Approach 1:
The patent applies different pattern densities to different locations: high pattern density in functioning areas for precise pattern formation, and optimized pattern density in dummy areas to maintain etching uniformity without causing microloading effects. This local differentiation allows each area to have the quality needed for its specific function while avoiding harmful effects.
Solution Approach 2:
The patent changes the pattern density parameter of sacrificial layers in dummy areas to be lower and more uniform compared to functioning areas. This parameter adjustment prevents microloading effects and dishing effects during etching while still maintaining sufficient etching control, thereby reducing harmful factors while preserving manufacturing precision.
3Manufacturing precision
If continuous sacrificial layers are formed across dummy areas, then manufacturing precision is improved through uniform mask coverage, but object-generated harmful factors increase due to short circuits from unnecessary wiring patterns
Solution Approach 1:
The patent segments the sacrificial layers in dummy areas into separate, non-connected components rather than forming continuous layers. This segmentation prevents the formation of unnecessary wiring patterns that could cause short circuits, while the distributed placement of segmented sacrificial layers still provides sufficient mask coverage for uniform etching control.
Solution Approach 2:
The patent extracts or removes the continuous sacrificial layer configuration from dummy areas, replacing it with discrete, separated sacrificial layer segments. This extraction eliminates the source of unnecessary wiring patterns that would cause short circuits while retaining the essential masking function for etching uniformity.
4Productivity
If wiring width is reduced to achieve small scale semiconductor devices, then productivity is improved through higher element density, but manufacturing precision deteriorates due to lithography resolution limits
Solution Approach 1:
The patent uses sacrificial layers as intermediary structures to form the final wiring patterns. By forming patterns in the sacrificial layers and using them as masks for etching the actual wiring layers, the method enables precise wiring formation at dimensions below direct lithography resolution limits, thereby achieving high element density while maintaining manufacturing precision.
Solution Approach 2:
The patent transitions from two-dimensional lithographic patterning to three-dimensional side wall processing. By forming sacrificial layers and using side wall etching to create the final patterns, the method adds a vertical dimension to the patterning process, enabling sub-lithographic resolution and high wiring density with maintained precision.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the occurrence of microloading and dishing effects, enhances manufacturing yield, and simplifies the design process by minimizing short circuits, allowing for the production of smaller, more reliable semiconductor devices.
Implementation Method 1
forming a concavity by etching the insulation layer to be processed using the third sacrificial layer and the fourth sacrificial layer as a mask
Data Source
AI summary
A method for manufacturing a semiconductor device of one embodiment of the present invention includes: forming an insulation layer to be processed over a substrate; forming a first sacrificial layer in a first area over the substrate, the first sacrificial layer being patterned to form in the first area a functioning wiring connected to an element; forming a second sacrificial layer in a second area over the substrate, the second sacrificial layer being patterned to form in the second area a dummy wiring; forming a third sacrificial layer at a side wall of the first sacrificial layer and forming a fourth sacrificial layer at a side wall of the second sacrificial layer, the third sacrificial layer and the fourth sacrificial layer being separated; forming a concavity by etching the insulation layer to be processed using the third sacrificial layer and the fourth sacrificial layer as a mask; and filling a conductive material in the concavity.