Semiconductor Wiring Gap Layout to Suppress Ion Migration

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Solution Overview

Problem

Conventional semiconductor devices with grooves in insulating films between wire lines may not sufficiently prevent ion migration, as ions can still move through the solder resist.

Innovation Solution

A semiconductor device design that includes a gap between adjacent wire lines, covered with a solder resist, to prevent ion migration. This design can also feature grooves or steps in the insulating film to further suppress ion movement.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If solder resist covers the entire wire line surface, then wire protection is improved, but ion migration can occur through the solder resist

Engineering Contradiction:
Improvewire protectionVSAvoidion migration prevention
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The solder resist is segmented into multiple layers with the first layer providing high ion migration resistance adjacent to the wire line, while the second layer provides general protection. This segmentation maintains comprehensive wire protection while preventing ion migration through the strategic placement of high-resistance material at the critical wire-solder resist interface.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The invention uses composite materials by combining solder resist layers with different ion migration resistance properties. The first solder resist layer has high ion migration resistance and the second layer has lower ion migration resistance, creating a composite structure that provides both wire protection and ion migration prevention.

Inventive Principle:
Principle #40Composite materials

Data Source

PatentUS20250081657A1Semiconductor device and method for manufacturing semiconductor device
Publication Date: 2025.03.06 SONY SEMICON SOLUTIONS CORP
  • US20250081657A1 patent drawing
  • US20250081657A1 patent drawing
  • US20250081657A1 patent drawing

AI summary

In a semiconductor device in which a wire line is covered with a solder resist, ion migration is prevented. A semiconductor device includes a first wire line, a second wire line, and a solder resist. In the semiconductor device including the first wire line and the second wire line, and the solder resist, the first wire line and the second wire line are wired adjacent to each other. In addition, in the semiconductor device, the solder resist covers each of the first wire line and the second wire line with a gap provided between the first wire line and the second wire line.