Semiconductor Wiring Gaps for Thermal Stress Dispersion
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Solution Overview
Problem
Conventional semiconductor devices experience characteristic defects due to thermal stress generated during temperature cycle tests, particularly in chip-size packages, where differences in thermal expansion coefficients between layers cause stress that affects transistor performance and imposes layout limitations.
Innovation Solution
Incorporating gaps in the wiring layer that extend from the upper surface to the lower portion of the insulating film, allowing for the dispersion of thermal stress and alleviating its impact on circuit elements, thereby inhibiting failures caused by thermal stress generation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If wiring is formed continuously over circuit elements to improve electrical connection, then electrical conductivity is improved, but thermal stress concentration increases causing transistor characteristic deterioration
Solution Approach 1:
The continuous wiring layer is segmented into multiple separate wiring regions by introducing gaps. These gaps divide the wiring into discrete segments that are isolated from each other, preventing thermal stress from concentrating and transmitting across the entire wiring structure, thereby protecting underlying transistors while maintaining electrical connectivity within each segment.
Solution Approach 2:
Gap regions are extracted from the continuous wiring structure, creating void spaces between adjacent wiring segments. These extracted gap regions serve as stress isolation zones that prevent thermal stress transmission, while the remaining wiring portions maintain their electrical connection functions.
2Reliability
If wiring layout is restricted to avoid thermal stress areas, then transistor characteristics are protected, but wiring design flexibility and integration density are reduced
Solution Approach 1:
By segmenting the wiring structure through gaps, the design allows wiring to be placed in locations that would previously have been restricted. The gaps create natural stress isolation zones, enabling greater freedom in wiring routing and layout design while still protecting transistor characteristics from thermal stress.
Solution Approach 2:
The gap regions act as intermediary stress isolation zones between wiring segments and underlying transistors. These intermediary structures mediate the thermal stress transmission, allowing flexible wiring layouts while protecting sensitive transistor regions from harmful stress concentrations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces thermal stress effects on circuit elements, allowing for improved wiring layout flexibility and increased reliability by dispersing stress across the laminated structure, thus preventing characteristic defects and enhancing design freedom.
Implementation Method 1
thermal stress caused by differences between the coefficients of thermal expansion of each of these is generated
Data Source
AI summary
A semiconductor device includes wiring that is formed by a conductive body extending, via an insulating film, on a front surface of a semiconductor substrate, and an insulating layer that covers the front surface of the semiconductor substrate including the wiring. Gaps are provided extending from an upper surface of the wiring to a lower portion of the insulating film.