Semiconductor Wiring Line Head Hammer Pattern for DRAM Connectivity
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Solution Overview
Problem
In DRAM devices, the varying shapes of bit line structures across cell blocks lead to patterning defects during the formation of wiring lines, affecting the electrical connectivity and reliability of the semiconductor device.
Innovation Solution
The semiconductor device incorporates specific wiring line configurations, including first and second wiring lines with head hammer patterns connected to contact plugs, where the contact plugs are positioned to ensure electrical connectivity between line portions, and the entire upper surface of the head hammer patterns contacts insulation material, reducing patterning defects and enhancing connectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If bit line structures are formed with varying shapes across cell blocks, then the wiring lines can be adapted to different cell block requirements, but patterning defects occur during the formation of these wiring lines
Solution Approach 1:
The bit line structure is divided into two distinct segments: a first line portion with a uniform first width, and a head hammer pattern with a second width greater than the first width. This segmentation allows the uniform line portion to be formed with high patterning precision using standard processes, while the enlarged head hammer pattern provides an adapter shape that facilitates reliable electrical connection without compromising the patterning quality of the main line structure.
Solution Approach 2:
The head hammer pattern introduces a localized change in width only at specific positions where electrical connections are needed, while the majority of the bit line structure maintains its original uniform width. This local quality modification enables the wiring line to adapt to different cell block requirements at connection points without affecting the overall structure and patterning precision of the bit lines across all cell blocks.
2Reliability
If the contact plug is positioned to ensure electrical connectivity, then the reliability of the semiconductor device improves, but the device complexity increases due to additional structural elements
Solution Approach 1:
The head hammer pattern serves multiple functions simultaneously: it acts as a structural element of the bit line, provides an enlarged contact area for reliable electrical connection, and serves as a positioning reference for contact plug formation. This multi-functionality reduces the need for additional separate structural elements, thereby maintaining device simplicity while improving electrical connectivity reliability.
Solution Approach 2:
The head hammer pattern acts as an intermediary structure between the thin bit line and the contact plug. Its enlarged width provides a stable platform that mediates the connection, ensuring reliable electrical contact while simplifying the positioning and formation process of the contact plug, thus reducing overall device complexity.
3Manufacturing precision
If the entire upper surface of the head hammer pattern contacts insulation material, then patterning defects are reduced, but the manufacturing process becomes more complex
Solution Approach 1:
The head hammer pattern is formed in advance during the bit line formation process, creating a pre-positioned structure with enlarged width at connection points. This preliminary action establishes the patterning geometry before contact plug formation, ensuring that subsequent manufacturing steps can proceed with higher precision and reducing the likelihood of patterning defects without requiring complex post-processing steps.
Data Source
AI summary
A semiconductor device includes a wiring line on a substrate, a first line portion having a line shape in a first direction, a head hammer pattern connected to an end of the first line portion in the first direction; a second wiring line spaced from the first wiring line in a second direction perpendicular to the first direction, the second wiring line including a second line portion parallel to the first line portion; a first contact plug electrically connecting the first line portion and the second line portion, the first contact plug being positioned adjacent to the first end of the first line portion and a second end of the second line portion in the first direction. The first contact plug has a bottom surface higher than a bottom surface of the first and second wiring lines. The upper surface of the first head hammer pattern contacts an insulation material.