Semiconductor Wiring Layout for High-Current Heat Suppression

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Solution Overview

Problem

Conventional semiconductor devices with power switching elements face challenges in efficiently managing high current densities and heat dissipation, leading to self-heating issues and reduced performance when handling large currents.

Innovation Solution

The semiconductor device incorporates a conductive member with specific wiring configurations, including band-shaped portions and extensions, which distribute current across larger cross-sectional areas, reducing current density and enhancing heat dissipation, while being compact and efficient.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If conventional semiconductor devices handle large currents, then current switching capability is improved, but self-heating increases and performance decreases

Engineering Contradiction:
Improvecurrent switching capabilityVSAvoidself-heating
Core Design Contradiction:
PowerVSTemperature

Solution Approach 1:

The conductive member extends in the thickness direction (z-direction) to form a three-dimensional current distribution structure. This vertical extension adds a new dimension for current flow paths, allowing current to be distributed both horizontally across the chip surface and vertically through the thickness direction, thereby reducing current density and self-heating while maintaining high current switching capability

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Temperature

If current is distributed across larger cross-sectional areas, then current density is reduced and heat dissipation is enhanced, but device area increases

Engineering Contradiction:
Improveheat dissipationVSAvoiddevice area
Core Design Contradiction:
TemperatureVSArea of stationary object

Solution Approach 1:

Instead of expanding the conductive member only in the horizontal plane (x-y directions), the invention extends it in the thickness direction (z-direction). This vertical dimension provides additional cross-sectional area for current distribution without proportionally increasing the device footprint, thereby improving heat dissipation while maintaining compact device area

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Temperature

If conductive members are added to distribute current, then current density is reduced, but device complexity increases

Engineering Contradiction:
Improvecurrent densityVSAvoidwiring configuration
Core Design Contradiction:
TemperatureVSDevice complexity

Solution Approach 1:

The conductive member serves multiple functions simultaneously: it acts as a current distribution path, a heat dissipation conductor, and an electrical connection element between the semiconductor element and external terminals. By consolidating these functions into a single multi-functional component rather than separate elements, the design reduces current density without proportionally increasing device complexity

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration effectively suppresses self-heating and supports high current handling, ensuring reliable performance and compact design by distributing current and increasing cross-sectional areas for improved heat management.

Implementation Method 1

a first conductive member constituting a path for a main circuit current switched by the plurality of first semiconductor elements and connected to the plurality of first semiconductor elements and a first terminal

Methodology Applied
Scientific EffectElectrical conduction: Conduction (electrical)

Implementation Method 2

distribute current across larger cross-sectional areas, reducing current density and enhancing heat dissipation

Methodology Applied
Scientific EffectHeat dissipation: Conduction (thermal)

Data Source

PatentUS20240047433A1Semiconductor device
Publication Date: 2024.02.08 ROHM CO LTD
  • US20240047433A1 patent drawing
  • US20240047433A1 patent drawing
  • US20240047433A1 patent drawing

AI summary

A semiconductor device includes a conductive substrate, first semiconductor elements bonded to the substrate, a first terminal on a side in first direction relative to the substrate, and a conductor (first/second wirings) connected to the semiconductor elements and the terminal. The first wiring includes a first end connected to the terminal and a second end separated from the first end in first direction. The second wiring is connected to the first wiring between the first and second ends. The first wiring includes first and second parts. The first part is between the first end and a connecting portion (first connecting part) at which the second wiring is connected to the first wiring. The second part is between the first connecting part and the second end. In a direction crossing the flow direction of the main circuit current, the first part has a larger size than the second part.