Semiconductor Wiring Structure for Insulation Distance and Bonding Impact
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Solution Overview
Problem
Conventional semiconductor devices form a base on an electrode by multiple bonding operations, which can damage the semiconductor element due to repeated impacts.
Innovation Solution
A semiconductor device design that includes a first semiconductor element with a first wiring connected to an electrode, where a second wiring with a smaller diameter than the first wiring electrically connects the first semiconductor element to a second semiconductor element, reducing direct impact on the first semiconductor element by connecting to the first wiring's upper surface rather than directly to the electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If multiple bonding operations are performed to form a base on the electrode, then the insulation distance between the semiconductor element and the wiring is secured, but the semiconductor element may be damaged due to repeated impacts
Solution Approach 1:
The patent introduces a base formed by metal wiring as an intermediary structure between the electrode and the bonding target. This base absorbs the bonding impact and distributes it across multiple bonding operations, preventing direct impact damage to the semiconductor element while maintaining the required insulation distance. The base acts as a mediator that decouples the semiconductor element from the repetitive mechanical stress of multiple bonding cycles.
Solution Approach 2:
The patent performs preliminary bonding operations to form the multistage base structure before final wiring connections are made. By pre-forming the base with controlled impact accumulation, the semiconductor element is protected from subsequent bonding impacts. The base is prepared in advance to bear the mechanical load, preventing direct transmission of impact forces to the fragile semiconductor element during later bonding stages.
2Reliability
If a second wiring with smaller diameter is used to connect the first semiconductor element to the second semiconductor element, then the insulation distance is maintained and impact is reduced, but the current carrying capacity may be limited
Solution Approach 1:
The patent applies different wiring diameters at different locations based on local requirements. The first wiring connected to the electrode has a larger diameter to handle high current and provide mechanical strength. The second wiring with smaller diameter is used where insulation distance is critical and mechanical impact needs to be minimized. This local differentiation of wiring properties optimizes both electrical performance and mechanical protection in different regions of the device.
Data Source
AI summary
A semiconductor device capable of securing an insulation distance between a semiconductor element and a wiring. The semiconductor device includes a first semiconductor element, a second semiconductor element, a first wiring, and a second wiring. The first semiconductor element includes a first main surface and a second main surface. An electrode is formed on the first main surface. The second semiconductor element is disposed at a position different from a position of the first semiconductor element in a thickness direction. The first wiring includes an end connected to the electrode. The end includes an upper surface and a cut surface. Diameter of the second wiring is smaller than diameter of the first wiring. The second wiring includes a first end and a second end. The first end is directly connected to the upper surface of the end of the first wiring.