Semiconductor Wiring Layout Reducing Inductance

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Solution Overview

Problem

In semiconductor devices with power control transistors, long lines between the drain electrode of the transistor and the cathode electrode of the diode can lead to increased inductance, which slows down switching speed due to the electrical current flow between these components.

Innovation Solution

The arrangement of transistors and diodes on a substrate with branching lines that overlap both components, allowing for shorter lines between the drain electrode of the transistor and the cathode electrode of the diode, thereby reducing inductance and enhancing switching speed.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If the line between the drain electrode of the transistor and the cathode electrode of the diode is long, then the layout flexibility is improved, but the inductance increases and switching speed decreases

Engineering Contradiction:

Improvelayout flexibilityVSAvoidswitching speed

Core Design Contradiction:

Adaptability or versatilityVSSpeed

Solution Approach 1:

The patent introduces a first line extending in a first direction between the transistor and diode, with branch lines extending in a second direction (perpendicular to the first direction) to connect to the transistor and diode respectively. This two-dimensional wiring layout allows the main current path to be shortened while maintaining flexible component placement, thereby reducing inductance without sacrificing layout adaptability.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

2Adaptability or versatility

If the line between the drain electrode of the transistor and the cathode electrode of the diode is long, then the component placement flexibility is improved, but the inductance of the line increases

Engineering Contradiction:

Improvecomponent placement flexibilityVSAvoidinductance

Core Design Contradiction:

Adaptability or versatilityVSObject-generated harmful factors

Solution Approach 1:

The patent employs a two-dimensional wiring structure where a first line extends in one direction and branch lines extend perpendicular to it, creating a compact current path that minimizes inductance while allowing flexible component placement.

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The wiring structure is segmented into a main first line and multiple branch lines, allowing the current path to be optimized independently for each component connection while maintaining overall flexibility in component arrangement.

Inventive Principle:

Principle #1Segmentation

Data Source

PatentUS9691757B2Semiconductor device including transistors and diodes and a first line extending between the transistors and diodes

Publication Date: 2017.06.27 RENESAS ELECTRONICS CORP

AI summary

Reduction of the speed of switching between the drain electrodes of transistors and the cathode electrodes of diodes due to the inductances of lines coupling them is inhibited. Transistors and diodes are formed over a substrate. The transistors and the diodes are arranged in a first direction. The substrate also includes a first line, first branch lines, and second branch lines formed thereover. The first line extends between the transistors and the diodes. The first branch lines are formed to branch from the first line in a direction to overlap the transistors and are coupled to the transistors. The second branch lines are formed to branch from the first line in a direction to overlap the diodes and are coupled to the diodes.