Semiconductor Wiring Peeling Prevention via Local Dielectric Insulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The use of low dielectric constant insulating films in semiconductor devices leads to physical stress during substrate cutting, causing peeling phenomena of wiring underneath, which affects the yield and reliability of semiconductor devices.
Innovation Solution
A semiconductor device design featuring a semiconductor chip region with a passivation film, a scribe line region with protruding insulating films, and wiring structures that include a first and second insulating film configuration, where the width of the second region is greater than the first, preventing peeling of the wiring from the insulating film.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a low dielectric constant insulating film is used in semiconductor devices, then device performance is improved, but physical stress during substrate cutting causes peeling of wiring underneath
Solution Approach 1:
The patent applies different dielectric constant values to different regions of the insulating film. The first insulating film has a first dielectric constant and the second insulating film has a second dielectric constant that is different from the first. This local differentiation allows the wiring region to maintain stable adhesion while other regions benefit from low dielectric constant performance, thus resolving the contradiction between device performance and wiring adhesion stability.
2Productivity
If substrate cutting is performed to separate devices, then individual chips are obtained, but physical stress causes peeling phenomenon in wiring
Solution Approach 1:
The patent implements a differentiated insulating film structure where the first insulating film under the wiring has optimized properties to prevent peeling during substrate cutting, while the second insulating film in other regions enables continued device performance improvement. This local quality differentiation protects wiring integrity during the chip separation process while maintaining overall device functionality.
3Ease of manufacture
If uniform insulating film structure is used, then manufacturing is simplified, but wiring peeling occurs under stress during cutting
Solution Approach 1:
The patent divides the insulating film into two distinct regions with different dielectric constants. The first insulating film with its specific dielectric constant is positioned to provide mechanical support and adhesion strength where wiring is located, while the second insulating film provides electrical performance optimization in non-wiring regions. This localized differentiation maintains ease of manufacture through a relatively simple two-layer structure while significantly improving wiring adhesion strength.
Data Source
AI summary
A semiconductor device has a semiconductor chip region which contains a semiconductor chip and a first portion of a passivation film covering the semiconductor chip and a scribe line region which contains a second portion of the passivation film connected to the first portion of the passivation film, a first insulating film protruding from a distal end of the second portion of the passivation film, and at least a part of a first wiring. A first portion of the first insulating film is disposed along the distal end of the second portion of the passivation film, a second portion of the first insulating film protrudes laterally beyond the first portion of the first insulating film, and the first wiring protrudes laterally beyond the second portion of the first insulating film.