Semiconductor Wiring Protection Against Laser Piercing

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Solution Overview

Problem

In semiconductor device fabrication, laser welding can result in molten portions piercing the lower wiring member, leading to scattering and potential short circuits or insulation failures, especially when the lower wiring member is thin, making it difficult to control heat input effectively.

Innovation Solution

A semiconductor device design that includes a protection member with a higher melting point than the wiring members, positioned under the area opposite the laser irradiation area, to prevent the laser beam from piercing and molten metal from scattering, ensuring stable bonding without damaging surrounding components.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If laser welding is performed on thin lower wiring member, then bonding between wiring members is achieved, but molten portion pierces the lower wiring member causing scattering and potential short circuits

Engineering Contradiction:
Improvebonding reliabilityVSAvoidlaser-induced damage
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A protection member with higher melting point than the lower wiring member is introduced as an intermediary element. This protection member is disposed on the back surface of the lower wiring member at the position opposite to the laser irradiation area, serving as a mediator that prevents the laser beam and molten metal from directly damaging the lower wiring member and surrounding components, while still allowing effective bonding between the wiring members.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Strength

If laser beam energy is increased to ensure bonding, then welding strength is improved, but molten portion pierces through the lower wiring member

Engineering Contradiction:
Improvewelding strengthVSAvoidheat input control
Core Design Contradiction:
StrengthVSManufacturing precision

Solution Approach 1:

The protection member, which has higher melting point than the lower wiring member, converts the potentially harmful high-energy laser irradiation into a beneficial process. The protection member absorbs the excess energy and prevents it from causing damage, while still allowing sufficient heat to pass through to achieve strong bonding between the wiring members. The higher melting point material essentially 'blesses' the high-energy process by preventing its harmful effects.

Inventive Principle:
Principle #22Blessing in disguise (Convert harm into benefit)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The use of a high-melting-point protection member effectively prevents laser-induced damage and ensures reliable bonding between wiring members, even when the lower wiring member is thin, enhancing the reliability and stability of the semiconductor device.

Implementation Method 1

a first wiring member and a second wiring member bonded to each other and being electrically connected to the semiconductor element, the first wiring member having an irradiation area for receiving irradiation of a laser beam

Methodology Applied
Scientific EffectLaser beam heating: Laser

Implementation Method 2

the protection member having a melting point higher than a melting point of at least one of the first wiring member and the second wiring member including the area on which the protection member is disposed

Methodology Applied
Scientific EffectMelting: Melting

Data Source

PatentUS11267076B2Semiconductor device and semiconductor device fabrication method
Publication Date: 2022.03.08 FUJI ELECTRIC CO LTD
  • US11267076B2 patent drawing
  • US11267076B2 patent drawing
  • US11267076B2 patent drawing

AI summary

A semiconductor device, including a semiconductor element, and a first wiring member and a second wiring member bonded to each other and being electrically connected to the semiconductor element. The first wiring member has an irradiation area for receiving irradiation of a laser beam. The semiconductor device also includes a protection member disposed on an area of the second wiring member opposite the irradiation area of the first wiring member, the protection member having a melting point higher than a melting point of at least one of the first wiring member and the second wiring member including the area on which the protection member is disposed.