Wiring structure with conductive features having different critical dimensions, and method of manufacturing the same
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in effectively controlling the resistance of metal interconnections during the back-end-of-line processes due to variations in critical dimensions of conductive features, which can impact the performance and efficiency of semiconductor devices.
Innovation Solution
The proposed solution involves a wiring structure with conductive features of different critical dimensions, where a first conductive feature and a second conductive feature are strategically positioned between a semiconductor element and metallic layers, with the second conductive feature having a smaller dimension than the first, and are enclosed by insulative liners, allowing for precise control of effective resistance through the use of diffusion barrier liners and inter-layer dielectric layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conductive features with uniform critical dimensions are used in metal interconnections, then manufacturing process is simpler, but resistance control precision deteriorates
Solution Approach 1:
The patent applies local quality by creating conductive features with different critical dimensions at different locations within the same interconnection structure. Specifically, first conductive features have a first critical dimension while second conductive features have a second critical dimension that is smaller than the first. This allows different regions to have optimized resistance characteristics tailored to their specific electrical requirements, thereby improving overall resistance control precision without requiring complex external adjustments.
Solution Approach 2:
The patent implements parameter changes by varying the critical dimension parameter of conductive features based on their functional requirements. By changing the critical dimension from a uniform value to multiple values (first critical dimension for first conductive features, second critical dimension for second conductive features), the patent enables precise control of electrical resistance. This parameter variation is achieved through selective masking and etching processes that create different feature sizes in different regions.
2Manufacturing precision
If conductive features with varying critical dimensions are implemented, then resistance control is improved, but manufacturing process complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the interconnection structure into distinct regions containing first conductive features and second conductive features with different critical dimensions. This segmentation is achieved through separate masking steps and selective etching processes. Each segment is optimized for specific resistance requirements, and the segmented approach allows standard manufacturing equipment to be used while achieving precise resistance control through the segmented feature geometry.
3Manufacturing precision
If insulative liners are added to enclose conductive features, then resistance control precision is improved, but device structure complexity increases
Solution Approach 1:
The patent uses insulative liners as intermediary elements that enclose the conductive features. These liners serve as mediators between the conductive features and the surrounding dielectric material, providing electrical isolation and defining the effective critical dimension of the conductive features. The insulative liners are formed through conformal deposition processes and anisotropic etching, creating a protective layer that precisely controls the electrical characteristics of the underlying conductive features without requiring direct modification of the conductive material itself.
Data Source
AI summary
The present application provides a wiring structure, a semiconductor device having the wiring structure, and a method of manufacturing the semiconductor device. The wiring structure includes a substrate, a metallic layer above the substrate, at least one first conductive feature and at least one second conductive feature. The first and second conductive features are disposed between the substrate and the metallic layer; the first conductive feature has a first critical dimension, and the second conductive feature has a second critical dimension less than the first critical dimension. An effective resistance of the wiring structure can be adjusted by changing the critical dimensions of the first and second conductive features. The semiconductor device including the wiring structure and a method of manufacturing the semiconductor device are also provided.