Semiconductor Device Withstand Voltage Ion Control
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Solution Overview
Problem
Existing semiconductor devices with withstand voltage structures face a decline in voltage due to the adhesion of movable ions on insulating films, which are not fully blocked by conductive layers, leading to uneven ion distribution and reduced device performance.
Innovation Solution
A semiconductor device configuration with a voltage applying circuit that applies a first voltage to electrodes on the insulating film independently of the semiconductor substrate, controlling the movement of movable ions and dispersing them evenly, thereby preventing a decline in withstand voltage and maintaining device characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conductive layer is formed on the insulating film to block movable ions, then the adhesion of movable ions to the insulating film is reduced, but the movable ions still penetrate through and become unevenly located in the insulating film, causing withstand voltage to decrease
Solution Approach 1:
A control electrode is introduced as an intermediary between the insulating film and the external environment. This control electrode applies a control voltage to actively manage the distribution of movable ions within the insulating film, preventing their harmful accumulation while maintaining the blocking function against external ion adhesion.
Solution Approach 2:
The patent changes the electrical parameter (voltage) applied to the insulating film structure by introducing a control voltage through the control electrode. By adjusting this control voltage, the distribution state of movable ions can be dynamically controlled, transforming them from a harmful factor into a manageable parameter.
2Productivity
If a voltage is applied to the semiconductor substrate to operate the semiconductor element, then the semiconductor device functions properly, but the voltage causes movable ions to move and become unevenly located in the insulating film, reducing withstand voltage
Solution Approach 1:
The patent employs periodic action by applying a control voltage to the control electrode during specific periods (when the semiconductor element is not operating or during idle periods). This periodic control prevents movable ion accumulation without interfering with the normal operation of the semiconductor element, thus maintaining both productivity and reliability.
Solution Approach 2:
The control electrode applies a control voltage in advance or during idle periods to prevent movable ions from becoming unevenly distributed before they can cause harmful effects. This preliminary action maintains the uniform distribution of movable ions, ensuring withstand voltage is preserved before operational stress occurs.
3Reliability
If the at least one electrode is electrically connected to the semiconductor substrate, then the electrode can control ions, but the electrode cannot apply independent voltage to the insulating film without affecting semiconductor element characteristics
Solution Approach 1:
The electrode structure is segmented into two distinct parts: a control electrode that is electrically insulated from the semiconductor substrate and dedicated to controlling movable ions in the insulating film, and the semiconductor element electrodes that control the semiconductor element operation. This segmentation allows independent voltage control for ion management without affecting element characteristics.
Solution Approach 2:
The control electrode acts as an intermediary structure that is electrically isolated from the semiconductor substrate. This intermediary enables independent voltage application to the insulating film for ion control, while the electrical insulation prevents any interference with the semiconductor element's electrical characteristics and operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively suppresses the decline in withstand voltage by evenly distributing movable ions within the insulating film, ensuring consistent device performance and preventing changes in semiconductor element characteristics.
Implementation Method 1
the voltage applying circuit applies a first voltage to the at least one electrode... by adjusting the first voltage that is applied to the at least one electrode, a desired voltage can be applied to the insulating film to control a movement of movable ions in the insulating film
Data Source
AI summary
A semiconductor device may be provided with a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, at least one electrode disposed on a surface of the insulating film, and a voltage applying circuit configured to apply a first voltage to the at least one electrode. The semiconductor substrate may be provided with a cell region and a non-cell region adjacent to the cell region. The cell region is provided with a semiconductor element, and the non-cell region is provided with a withstand voltage structure. The insulating film may be disposed on a surface of the non-cell region. The at least one electrode may be electrically insulated from the semiconductor substrate. The voltage applying circuit may apply the first voltage to the electrode during at least a part of a first period in which a second voltage is not applied to the semiconductor element.