Semiconductor Word Line Edge Shaping via Simultaneous Etching
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor manufacturing, the optical proximity effect leads to increased width of word line structures near the edge of memory regions, causing adjacent structures to interfere or form short circuits, necessitating additional etching processes that increase costs and complexity.
Innovation Solution
A method involving the simultaneous removal of second conductive layers of word line structures and a portion of the capacitance structure's conductive layer to form a trench, exposing the dielectric layer, which prevents interference and short circuits while combining photomasks to reduce manufacturing costs and processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an additional photomask and etching process are used to remove the wider portion of word line structures, then the short circuit problem is prevented, but the manufacturing cost and process complexity increase
Solution Approach 1:
The patent combines the etching process for word line structures with the etching process for capacitance structures into a single simultaneous operation. By using a unified photomask pattern that defines both the word line edges and the capacitance structure regions, the method eliminates the need for separate etching steps, thereby reducing manufacturing process complexity while maintaining the reliability benefit of removing wider portions to prevent short circuits
2Reliability
If an additional photomask and etching process are used to remove the wider portion of word line structures, then the short circuit problem is prevented, but the manufacturing cost increases
Solution Approach 1:
The patent merges the patterning and etching operations for word line structures and capacitance structures into a single process step. By designing the photomask to simultaneously define both structures and performing one unified etching operation, the method reduces the number of photomasks required and decreases the total number of process steps, thereby lowering manufacturing costs while ensuring reliable prevention of short circuits through proper removal of wider portions
3Reliability
If the width of word line structures near the edge is reduced by additional etching, then interference between adjacent structures is prevented, but the manufacturing time increases
Solution Approach 1:
The patent implements continuous useful action by performing the etching of word line structures and capacitance structures in the same uninterrupted process step. The simultaneous etching operation eliminates idle time between separate processing steps, maintaining continuous material removal action. This approach prevents interference between adjacent structures by properly shaping word line edges while minimizing manufacturing time through process integration
Data Source
AI summary
A method for manufacturing semiconductor device is provided. A substrate having a memory region and a capacitance region is provided. A plurality of word line structures are formed on the memory region of the substrate. A capacitance structure is formed on the capacitance region of the substrate. The word line structures and the capacitance structure each include a first dielectric layer on the substrate, a first conductive layer on the first dielectric layer, a second dielectric layer on the first conductive layer, and a second conductive layer on the second dielectric layer. The second conductive layers of the word line structures close to an edge of the memory region and a portion of the second conductive layer of the capacitance structure are removed at the same time to form a trench exposing a portion of the second dielectric layer.