Semiconductor X-ray Detector Segmentation for Heat Management
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Solution Overview
Problem
Current semiconductor X-ray detectors face challenges in large-area and high-pixel production due to cumbersome heat management, which limits their application in various imaging and inspection systems.
Innovation Solution
The semiconductor X-ray detector design incorporates an X-ray absorption layer with diodes or resistors, coupled with an electronics layer that includes a redistribution layer and direct or flip chip bonding, allowing for efficient charge carrier collection and processing without a scintillator, enabling the detection of X-ray photons and formation of images through direct conversion of X-rays into electric signals.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If semiconductor X-ray detectors use direct conversion of X-ray into electric signals, then spatial resolution and absorption efficiency are improved, but heat management becomes cumbersome making large-area detectors difficult to produce
Solution Approach 1:
The detector is divided into multiple independent pixel modules that can be tiled together to form large-area detectors. Each pixel module processes X-rays independently, allowing heat management to be localized rather than requiring cooling of an entire large-area detector, thus resolving the heat management complexity while maintaining high spatial resolution through direct conversion
Solution Approach 2:
The patent transitions from planar pixel arrays to three-dimensional stacked architectures with multiple sensing layers. This vertical stacking allows heat to be dissipated through additional dimensions and surfaces, reducing thermal management complexity while maintaining high spatial resolution through the direct conversion mechanism in each layer
2Measurement precision
If semiconductor X-ray detectors use direct conversion of X-ray into electric signals, then absorption efficiency is improved, but device complexity increases making large-area production difficult
Solution Approach 1:
The detector is segmented into modular pixel units that can be manufactured independently and then assembled into large-area detectors. This segmentation allows standardization of manufacturing processes for each module, improving ease of production while maintaining high absorption efficiency through direct conversion in each module
Solution Approach 2:
The patent designs universal pixel modules with standardized interfaces and functions that can be replicated and assembled to create detectors of various sizes. This universality simplifies manufacturing by using the same core components and processes across different detector configurations, making large-area production more feasible while preserving high absorption efficiency
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances the spatial resolution and absorption efficiency, facilitating the production of large-area detectors with multiple pixels, suitable for medical imaging, cargo scanning, and other applications by eliminating the need for bulky cooling mechanisms.
Implementation Method 1
A semiconductor X-ray detector may include a semiconductor layer that absorbs X-ray in wavelengths of interest. When an X-ray photon is absorbed in the semiconductor layer, multiple charge carriers (e.g., electrons and holes) are generated and swept under an electric field towards electrical contacts on the semiconductor layer.
Data Source
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Figure 2
AI summary
An apparatus suitable for detecting x-ray, comprising: an X-ray absorption layer (110) comprising an electrode; an electronics layer (120), the electronics layer (120) comprising: a substrate (122) having a first surface (124) and a second surface (128), an electronics system (121) in or on the substrate (122), an electric contact (125) on the first surface (124), a via (126), and a redistribution layer (RDL) (123) on the second surface (128); wherein the RDL (123) comprises a transmission line (127); wherein the via (126) extends from the first surface (124) to the second surface (128); wherein the electrode is electrically connected to the electric contact (125); wherein the electronics system (121) is electrically connected to the electric contact (125) and the transmission line (127) through the via (126).