Sense Amplifier Back-Bias Control for Fast Low-Power Memory
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in achieving both low power consumption and rapid operational speed while ensuring data reliability and amplification.
Innovation Solution
A semiconductor memory device is designed with a sense amplifier, voltage supply circuit, and voltage supply control circuit, which includes a plurality of transistors that receive driving voltages from multiple voltage supply lines and generate bias control signals to adjust back bias voltages, enabling rapid detection and amplification of data voltage levels.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a sense amplifier is activated with fixed bias voltages to detect and amplify data voltage levels, then the operational speed is improved, but power consumption increases and leakage current is not reduced
Solution Approach 1:
The patent applies dynamics by making the back bias voltage adjustable rather than fixed. The voltage supply control circuit dynamically changes the back bias voltage applied to the sense amplifier based on operational requirements, allowing the device to optimize between speed and power consumption modes as needed
Solution Approach 2:
The patent changes the electrical parameter (back bias voltage) of the sense amplifier to control its operation. By varying the back bias voltage level, the system can adjust the threshold voltage of transistors in the sense amplifier, thereby controlling both the detection speed and the leakage current/power consumption characteristics
2Loss of energy
If the back bias voltage is adjusted to reduce leakage current and power consumption, then power efficiency is improved, but the threshold voltage changes may affect detection accuracy
Solution Approach 1:
The patent implements feedback by having the voltage supply control circuit monitor the operational state and data line conditions, then automatically adjust the back bias voltage to maintain optimal detection performance while minimizing leakage. The control circuit ensures that threshold voltage adjustments do not compromise the ability to detect data voltage levels accurately
3Reliability
If multiple voltage supply lines are used to provide driving voltages to the sense amplifier, then the operational speed and reliability are improved, but the device complexity increases
Solution Approach 1:
The patent applies universality by designing the voltage supply control circuit to manage multiple voltage supply lines (first, second, and third voltage supply lines) through a single integrated control mechanism. This multi-functional control circuit can selectively activate and adjust different voltage lines based on operational needs, providing reliable data detection without proportionally increasing overall system complexity
Data Source
AI summary
A semiconductor memory device includes a sense amplifier, a voltage supply circuit and a voltage supply control circuit. The sense amplifier may be activated by receiving driving voltages from first to third voltage supply lines to detect and amplify voltage levels of a data line and a data bar line. The voltage supply circuit may apply the driving voltages to the first to third voltage supply lines in response to first to third voltage supply signals and a bias control signal. The voltage supply control circuit may generate the first to third voltage supply signals and the bias control signal in response to an active signal.