Sense Amplifier Layout Compression via Vertical Gate Nesting
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Solution Overview
Problem
Existing methods for reducing the layout area of sense amplifier regions in semiconductor memory devices are insufficient to keep pace with advancements in process miniaturization, necessitating a more effective layout compression technique.
Innovation Solution
The semiconductor memory device incorporates a sense amplifier section with specific arrangements of diffusion layers, contacts, and gates, where first and second diffusion layers are formed at predetermined intervals, separated by regions, and gates are extended across these regions to minimize area usage, allowing for denser and more efficient transistor placement.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional layout compression methods are used for sense amplifier region, then layout area is reduced to some extent, but the reduction is insufficient to keep pace with process miniaturization
Solution Approach 1:
The patent transitions from conventional two-dimensional layout compression to a three-dimensional structure by forming the gate electrode to extend in the third dimension (vertical direction) over the semiconductor layer. This allows the sense amplifier region to be compressed in the planar view while maintaining functional requirements, achieving significant area reduction that keeps pace with process miniaturization.
Solution Approach 2:
The patent implements nesting by placing the gate electrode structure within the space defined by the first and second diffusion layers. The gate extends vertically over the semiconductor layer between the diffusion layers, effectively nesting components within existing structural boundaries to maximize space utilization and reduce overall layout area.
2Area of stationary object
If gate and source/drain diffusion layer are arranged with special layout form, then layout area is reduced, but manufacturing complexity increases
Solution Approach 1:
The patent segments the sense amplifier region into distinct functional areas with clearly defined structures: first diffusion layers, second diffusion layers, and gate electrodes. This segmentation allows each component to be formed through standardized processes while achieving compact layout, balancing manufacturing simplicity with area reduction.
Solution Approach 2:
The gate electrode structure serves multiple functions simultaneously: it acts as the control element for transistors, defines the active region boundaries, and enables vertical stacking with diffusion layers. This multi-functionality reduces the need for separate structural elements, simplifying manufacturing while achieving compact layout.
Data Source
AI summary
A semiconductor memory device includes a sense amplifier section. The sense amplifier section includes first n-type diffusion layers, second n-type diffusion layers, first to fifth gates, and first to eighth contacts. The first to fourth contacts are formed over the first n-type diffusion layers. The fifth to eighth contacts are formed over the second n-type diffusion layers. The first and fourth gates are formed in a region between the first n-type diffusion layers. The third gate is formed in a region between the first n-type diffusion layers and in a region between the second n-type diffusion layers. The second and fifth gates are formed in a region between the second n-type diffusion layers.