Sense Amplifier MAC Memory Circuit for In-Memory Computing
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Solution Overview
Problem
Existing semiconductor devices lack efficient integration of arithmetic operations within memory devices, limiting their performance in applications requiring computational tasks.
Innovation Solution
Incorporation of a sense amplifier circuit and arithmetic circuit within the semiconductor device to perform multiply-accumulate (MAC) operations, utilizing a memory control circuit to generate addresses and output internal data for MAC operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If arithmetic operations are performed outside the memory device, then computational accuracy is maintained, but computational performance and efficiency deteriorate due to data transfer requirements
Solution Approach 1:
The patent merges the arithmetic circuit with the memory device by integrating a MAC operator and sense amplifier circuit into the memory structure. The arithmetic circuit is positioned to directly access memory cells through shared bit lines and word lines, eliminating the need for separate data transfer interfaces between memory and processing units. This consolidation enables arithmetic operations to be performed directly within the memory device, significantly improving computational performance while managing integration complexity through unified resource sharing.
2Productivity
If arithmetic circuits are integrated within memory devices, then computational efficiency improves, but current consumption increases due to additional circuit operations
Solution Approach 1:
The patent implements continuous useful action by designing the sense amplifier circuit to generate internal voltage continuously during MAC operations without requiring separate activation phases. The sense amplifier remains in a ready state, continuously monitoring bit line voltages and generating the necessary internal voltage for arithmetic operations. This eliminates the need for repeated activation and deactivation cycles, reducing control overhead and current consumption while maintaining high computational efficiency throughout the operation duration.
Solution Approach 2:
The sense amplifier circuit performs self-service by automatically generating the internal voltage required for MAC operations based on the detected voltage levels on bit lines. When the sense amplifier detects a voltage level indicating valid data, it autonomously activates to generate the internal voltage without requiring external control signals for each individual operation. This self-activating mechanism reduces the current consumption associated with control circuitry while maintaining continuous computational efficiency.
3Measurement precision
If sense amplifier circuit generates internal voltage during MAC operation, then computational accuracy improves, but operation time increases due to additional voltage generation steps
Solution Approach 1:
The patent applies preliminary action by pre-positioning the sense amplifier circuit in a ready state before MAC operations begin. The sense amplifier is continuously monitoring the bit lines and maintains its activation readiness, so when arithmetic operations are initiated, the internal voltage generation begins immediately without requiring activation delays. This preliminary positioning of the sense amplifier in a ready state eliminates startup time penalties while ensuring accurate voltage generation for precise computational results throughout the MAC operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances computational performance by enabling MAC operations directly within the memory device, reducing current consumption and improving efficiency in tasks like artificial intelligence and machine learning.
Implementation Method 1
the plurality of sense amplifiers stores internal data output by the plurality of columns by amplifying the internal data and generates an internal voltage by driving a segment line based on the internal data and a plurality of column signals
Data Source
AI summary
A semiconductor device includes a sense amplifier circuit including a plurality of sense amplifiers connected to a plurality of columns, wherein the plurality of sense amplifiers stores internal data output by the plurality of columns by amplifying the internal data, and generates an internal voltage by driving a segment line based on the internal data and a plurality of column signals after the start of an arithmetic operation, and an arithmetic circuit configured to generate weight data by performing a multiply-accumulate (MAC) operation based on a voltage level of the internal voltage and configured to output the weight data to the segment line.