Sense Amplifier Node Charging for Non-Volatile Memory Circuit Size Reduction
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Solution Overview
Problem
Current non-volatile semiconductor memory devices face challenges in reducing circuit size while maintaining effective reading operations, particularly in the design of sense amplifiers and control units.
Innovation Solution
The proposed non-volatile semiconductor memory device incorporates a sense amplifier with a latch unit, transistors, and a control unit that manages voltage levels and transistor states to optimize reading operations, including the use of wiring capacitance to reduce the number of capacitor elements and transistors, thereby minimizing circuit size.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If conventional sense amplifier design is used, then reading operation effectiveness is maintained, but circuit size cannot be reduced
Solution Approach 1:
The patent combines the sense amplifier and latch unit into an integrated circuit structure where the sense amplifier outputs directly drive the latch unit. This merging eliminates separate discrete components and reduces overall circuit area while maintaining functional effectiveness through direct signal coupling.
Solution Approach 2:
The latch unit serves multiple functions: it stores read data, provides level shifting for different voltage domains, and enables bidirectional communication between memory core and external interface. This multi-functionality reduces the need for separate dedicated circuits, thereby reducing total circuit size.
2Measurement precision
If more capacitor elements and transistors are used, then reading accuracy is improved, but circuit size increases
Solution Approach 1:
The circuit uses existing signal transitions and voltage levels from the memory core operations to drive the latch unit, rather than requiring separate dedicated reading circuits. The sense amplifier leverages the natural signal swings from memory cell access to provide sufficient driving capability for the latch, eliminating the need for additional amplification stages.
Solution Approach 2:
The patent employs voltage level translation and signal conditioning techniques that modify electrical parameters (voltage levels, signal transitions) to achieve accurate data latching without requiring additional physical components. By optimizing timing and voltage parameters, the circuit achieves reliable operation with fewer discrete elements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a reduction in circuit size while maintaining the sense margin and accuracy of data reading, enabling efficient data storage and retrieval.
Implementation Method 1
a control unit that controls the sense amplifier during a read operation, to charge the second node to a first voltage, and then charge the first node to a second voltage
Data Source
AI summary
A non-volatile semiconductor memory device includes a memory cell, and a sense amplifier that includes a latch unit, a first transistor having a first end electrically connected to the latch unit and a second end electrically connected to a first node, a second transistor having a first end electrically connected to the first node and a second end electrically connected to the memory cell, and a third transistor having a first end electrically connected to a second node between the first end of the first transistor and the latch unit. A control unit of the device controls the sense amplifier during a read operation, to charge the second node to a first voltage, and then charge the first node to a second voltage, turn on the second transistor after charging the first node to the second voltage, and turn on the third transistor after turning on the second transistor.