Sense Amplifier Module Parallel Read Operations
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Solution Overview
Problem
Current semiconductor storage devices face challenges in efficiently executing read operations due to limitations in data transfer and processing speed, particularly during hard and soft bit reads, which can lead to errors and delayed data retrieval.
Innovation Solution
The implementation of a sense amplifier module with additional switch transistors and latch circuits allows for parallel execution of read operations and data transfer, enhancing data processing speed and reducing the impact on element regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If traditional sequential read operations are used, then device complexity is reduced, but data retrieval speed and processing efficiency deteriorate
Solution Approach 1:
The sense amplifier module is segmented into multiple functional units: first latch circuit, second latch circuit, third latch circuit, and fourth latch circuit, each handling specific data transfer tasks. This segmentation enables parallel operation of multiple read paths, improving data retrieval speed while distributing the complexity across modular components
Solution Approach 2:
The patent introduces a temporal dimension to the data transfer process by enabling simultaneous execution of read operations and data transfer operations. The first and second latch circuits operate in parallel with the third and fourth latch circuits, creating multiple operational dimensions that enhance overall processing throughput
2Productivity
If additional latch circuits and switch transistors are added for parallel processing, then data processing speed improves, but device complexity increases
Solution Approach 1:
Data is preliminarily stored in intermediate latch circuits (first, second, third, and fourth latch circuits) before final transfer to the output. This preliminary action enables parallel preparation of multiple data sets, increasing processing throughput while organizing circuit complexity in a structured, manageable sequence
Solution Approach 2:
The latch circuits serve as intermediary storage elements between the sense amplifier and the output buffer. These intermediaries enable decoupling of the read operation from the transfer operation, allowing both to proceed simultaneously and thereby improving throughput without creating unmanageable circuit complexity
3Loss of time
If parallel read and transfer operations are executed simultaneously, then operational delays are reduced, but the impact on element regions increases
Solution Approach 1:
The circuit is segmented into spatially separated latch circuits that handle different data paths independently. This segmentation distributes the operational load across different element regions, reducing localized impact while maintaining parallel operation benefits and minimizing operational delays
Data Source
AI summary
A semiconductor storage device includes a memory string, a sense amplifier connected to the memory string, first, second, third, and fourth latch circuits that are each connected to the sense amplifier, a first wiring connected to the sense amplifier, the first latch circuit and the second latch circuit, a second wiring connected to the third latch circuit, a third wiring connected to the fourth latch circuit, a first switch transistor between the first wiring and the third wiring, a second switch transistor between the first wiring and the second wiring, and a third switch transistor between the second wiring and the third wiring.