Sense Amplifier Program-Verify Voltage Sequencing
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Solution Overview
Problem
Current semiconductor storage devices face challenges in improving read speed, particularly during program-verify operations, due to limitations in efficiently determining and processing data thresholds in NAND type flash memory systems.
Innovation Solution
The semiconductor storage device incorporates a sense amplifier that continuously applies a first voltage to the gate of a memory cell transistor, allowing for the determination of first and second data using distinct voltage levels, thereby optimizing the program-verify operation by eliminating the need for repeated clock-up operations and enhancing data transfer efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If repeated clock-up operations are performed to determine data thresholds, then measurement precision is improved, but loss of time increases
Solution Approach 1:
The patent applies preliminary action by pre-charging the bit line to a first potential level before the verify operation and preparing the sense amplifier in advance. The sense amplifier is configured to directly compare the bit line potential with a reference potential without requiring repeated clock-up operations, thus achieving accurate data threshold determination while reducing operation time.
Solution Approach 2:
The patent changes the potential level parameters by using a first potential level for the bit line during the verify operation and a second potential level for the reference potential. By adjusting these voltage parameters and eliminating the need for repeated clocking, the system achieves both measurement precision and time efficiency in determining data thresholds.
2Measurement precision
If complex data processing procedures are used to ensure accuracy, then measurement precision is improved, but device complexity increases
Solution Approach 1:
The patent extracts and eliminates the complex clock-up operation sequence from the sense amplifier workflow. By removing this redundant procedural step and using a direct potential comparison method, the device maintains measurement precision while significantly reducing operational complexity and improving efficiency.
Data Source
AI summary
A semiconductor storage device includes a bit line, a memory cell transistor electrically connected to the bit line, and a sense amplifier that reads data from the memory cell transistor via the bit line. During an operation of determining first data and second data, while continuously applying a first voltage to a gate of the memory cell transistor, the sense amplifier first determines the first data based upon a second voltage, and then determines the second data based upon a third voltage lower than the second voltage.