Sense Amplifier Switching for Low-Power Memory Read Amplification
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Solution Overview
Problem
Sense amplifiers in semiconductor memories face high power consumption issues, which affect their performance and application scenarios.
Innovation Solution
A sense amplifier design that includes an amplification module and switch modules to control connection states with bit lines and reference bit lines based on voltage and control signals, disconnecting from the reference bit line when reading a first state to reduce power consumption and improve signal processing speed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the sense amplifier is connected to the reference bit line during the amplification stage, then the amplification function is improved, but the power consumption increases
Solution Approach 1:
The patent applies the dynamics principle by making the connection state between the sense amplifier and reference bit line changeable during the amplification stage. The first switch module dynamically controls the connection based on the read data state: when reading a first state (logic 0), the amplification module is disconnected from the reference bit line to save power; when reading a second state (logic 1), the connection is maintained for proper amplification. This dynamic switching resolves the contradiction by adapting the connection state to the specific read operation requirements.
2Use of energy by moving object
If the sense amplifier is disconnected from the reference bit line, then the power consumption is reduced, but the signal processing speed may be affected
Solution Approach 1:
The patent applies the preliminary action principle by pre-charging the reference bit line to a predetermined voltage level before the amplification stage. This preliminary charging ensures that when the sense amplifier needs to connect to the reference bit line during amplification, the line is already prepared and can immediately participate in the amplification process without delay. This resolves the speed concern by ensuring the reference bit line is ready in advance, allowing power savings through disconnection when not needed while maintaining speed when connection is required.
Data Source
AI summary
The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module, configured to read data in a storage unit on a bit line or a storage unit on a reference bit line; and a first switch module, configured to control the amplification module to be disconnected from the reference bit line when the sense amplifier reads a first state for the bit line and the sense amplifier is in an amplification stage, and control the amplification module to be connected to the reference bit line when the sense amplifier reads a second state for the bit line and the sense amplifier is in the amplification stage. The present disclosure can reduce the power consumption of the sense amplifier.