Semiconductor Sense Cell Electrostatic Breakdown Prevention

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Solution Overview

Problem

Semiconductor devices with sense cell parts are prone to electrostatic breakdown during handling and grinding, leading to reduced yield due to the thin insulating films and potential differences between control terminals, especially when the sealing resin charges and discharges static electricity.

Innovation Solution

A method involving bonding semiconductor elements with main and sense cell parts to a relay substrate, using wire connections, and applying a second electrode material with a shorting part to equalize potentials, followed by sealing with resin and grinding to expose the electrode material, thereby preventing electrostatic breakdown.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the sealing resin covers the surrounding area of the semiconductor element, then the sealing and protection function is improved, but electrostatic breakdown occurs in the sense cell part during handling and grinding

Engineering Contradiction:

Improvesealing protection functionVSAvoidelectrostatic breakdown

Core Design Contradiction:

ReliabilityVSObject-affected harmful factors

Solution Approach 1:

A ground potential electrode is introduced as an intermediary element between the sealing resin and the sense cell part. This electrode acts as a mediator that safely dissipates static electricity accumulated in the sealing resin to the ground potential, preventing electrostatic breakdown while maintaining the sealing protection function.

Inventive Principle:

Principle #24Intermediary (Mediator)

Solution Approach 2:

The ground potential electrode creates an equipotential region that equalizes the electrical potential between the sealing resin and the sense cell part. By maintaining equal potential, the electrode eliminates potential differences that would otherwise cause electrostatic discharge and damage to the thin insulating films in the sense cell part.

Inventive Principle:

Principle #12Equipotentiality

2Adaptability or versatility

If the control pads are independently connected, then the signal control function is improved, but potential difference occurs between control terminals reducing electrostatic breakdown resistance

Engineering Contradiction:

Improvesignal control functionVSAvoidelectrostatic breakdown resistance

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The ground potential electrode serves as a common intermediary reference for all control terminals. By providing a shared ground potential path, it allows independent signal control while simultaneously preventing potential differences between terminals that would reduce electrostatic breakdown resistance.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Productivity

If the sense cell part has thin insulating films, then the device integration density is improved, but the thin films are vulnerable to breakdown from excess voltage caused by static electricity

Engineering Contradiction:

Improvedevice integration densityVSAvoidinsulating film durability

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

The ground potential electrode provides beforehand cushioning by creating a safe discharge path for static electricity before it can accumulate to dangerous levels. This preventive measure protects the thin insulating films in advance, allowing high integration density while maintaining film durability.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

Solution Approach 2:

The electrode acts as an intermediary protective layer that intercepts and safely dissipates electrostatic energy before it can reach and damage the thin insulating films of the sense cell part, enabling both high integration and film protection.

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The method effectively suppresses electrostatic breakdown in semiconductor devices with sense cell parts by equalizing potentials and reducing the risk of insulating film damage during handling and processing, improving yield and operational stability.

Implementation Method 1

bonding a second electrode material having a shorting part shorting each of the control pads on the relay substrate

Methodology Applied

Scientific EffectElectrical Conduction: Conduction (electrical)

Implementation Method 2

if the sealing resin covering a surrounding area of the semiconductor element takes charge, there is a problem that an electrostatic breakdown occurs

Methodology Applied

Scientific EffectElectrostatic Discharge: Electrostatic Discharge

Data Source

PatentUS11462516B2Method of manufacturing semiconductor device

Publication Date: 2022.10.04 MITSUBISHI ELECTRIC CORP

AI summary

An object of the present disclosure is to provide a method of manufacturing a semiconductor device capable of suppressing an electrostatic breakdown in a configuration including a semiconductor element with a sense cell part. A method of manufacturing a semiconductor device according to the present disclosure includes: bonding each of semiconductor elements 1 and a relay substrate on a conductor plate; connecting each of signal pads of each of the semiconductor elements and each of control pads of the relay substrate by a wire; bonding a first electrode material on each of the semiconductor elements; bonding a second electrode material on the relay substrate; sealing the conductor plate, each of the semiconductor elements, the relay substrate, the first electrode material, and the second electrode material by a sealing resin; and grinding the sealing resin and removing the shorting part to expose part of the second electrode material.