Sense Transistor Resistor Compensation for Power Transistors
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Solution Overview
Problem
In power circuits, indirect measurement of drain-source current of a power transistor using a sense transistor is affected by parasitic resistance and gate bias, leading to variable sense ratio due to temperature fluctuations and gate-to-source bias variations.
Innovation Solution
Integration of a resistor with polysilicon and metal sections coupled to the sense transistor, along with a controller providing a virtual connection and operational amplifier, to compensate for parasitic resistance and maintain a stable sense ratio by matching the resistance of the resistor to the ratio of sense transistor channel resistance to power transistor channel resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a sense transistor is used to indirectly measure the drain-source current of a power transistor, then the measurement capability is provided, but the measurement precision deteriorates due to parasitic resistance and temperature fluctuations causing variable sense ratio
Solution Approach 1:
A dedicated resistor is introduced as an intermediary element between the sense transistor and the measurement circuit. This resistor has a value specifically designed to match the parasitic resistance, thereby serving as a compensating element that cancels out the harmful effects of parasitic resistance variations on the sense ratio, improving measurement precision across temperature ranges.
Solution Approach 2:
The resistor value is specifically selected to match the parasitic resistance value, creating a parameter relationship where the added resistor compensates for the parasitic effects. By changing the circuit configuration to include this matched resistor, the sense ratio becomes stable despite temperature-induced variations in parasitic resistance, resolving the contradiction between measurement precision and reliability.
2Ease of operation
If parasitic resistance is present in the power transistor, then the transistor can function, but the sense ratio becomes variable due to gate-to-source bias variations and temperature fluctuations
Solution Approach 1:
The parasitic resistance, which normally degrades sense ratio stability, is converted into a benefit by introducing a compensating resistor with a matched value. The harmful parasitic resistance variations are counterbalanced by the deliberately added resistor, transforming the problem into a solution where the same parasitic effects are used to maintain stability through compensation.
Solution Approach 2:
By introducing a resistor with a specific value that matches the parasitic resistance, the circuit parameters are changed to include this compensation element. This parameter matching creates a stable sense ratio despite variations in gate-to-source bias and temperature, as the added resistor compensates for the parasitic effects that would otherwise cause instability.
3Measurement precision
If the sense transistor drain-source current is used for indirect measurement, then current measurement capability is provided, but the measurement accuracy deteriorates due to the much smaller magnitude of sense current
Solution Approach 1:
The resistor serves as an intermediary that converts the small sense current into a measurable voltage drop. By placing the matched resistor in series with the sense transistor, the small current generates a voltage signal that can be accurately measured, thereby recovering the measurement information that would be lost due to the small current magnitude while maintaining measurement precision.
Data Source
AI summary
An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.


