Sensor Base Layer Buffer Insulating Layer Bonding Force
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Solution Overview
Problem
The durability of multimedia electronic devices is compromised due to insufficient bonding force between organic and inorganic films in their stack structures, affecting the reliability of touch-based input sensors.
Innovation Solution
An electronic device design incorporating a sensor base layer with a buffer insulating layer made of silicon and oxygen, and a base insulating layer of silicon nitride, where the oxygen atomic percent in the buffer insulating layer is 2 to 100 times that in the base insulating layer, enhancing the bonding force and porosity to trap gases and impurities.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a stack structure with organic and inorganic films is used in the display panel and input sensor, then the device can provide touch-based input functionality, but the bonding force between the organic film and inorganic film is insufficient, degrading device durability
Solution Approach 1:
A buffer insulating layer comprising silicon and oxygen is introduced between the inorganic film (silicon nitride) and organic film in the sensor base layer. This intermediate layer acts as a mediator to improve adhesion between the inorganic and organic films, preventing delamination and enhancing overall device durability while maintaining touch-based input functionality.
Solution Approach 2:
The sensor base layer employs a composite structure with multiple materials: silicon nitride (inorganic), silicon and oxygen-containing material (buffer layer), and organic film. This composite material approach leverages the complementary properties of each material to achieve both functional performance and improved bonding strength.
2Ease of manufacture
If the sensor base layer uses conventional insulating layers, then the manufacturing process is simple, but gases and impurities are not effectively trapped, reducing device reliability
Solution Approach 1:
The buffer insulating layer is designed with controlled porosity to trap gases and impurities that may be present during the manufacturing process. This porous structure prevents gas pockets and impurities from compromising the bonding between layers, thereby enhancing device reliability without significantly complicating the manufacturing process.
Solution Approach 2:
The buffer insulating layer converts potentially harmful gases and impurities into beneficial trapped elements within its porous structure. By capturing these contaminants during manufacturing, the layer prevents them from causing delamination or performance issues, effectively turning a manufacturing challenge into a reliability enhancement.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves the durability and reliability of the electronic device by increasing the bonding force between layers and effectively trapping gases and impurities, thereby enhancing the device's performance and longevity.
Implementation Method 1
the buffer insulating layer may have a porosity that is higher than a porosity of the base insulating layer
Implementation Method 2
The base insulating layer and the buffer insulating layer may be formed through a chemical vapor deposition (CVD) scheme
Data Source
AI summary
An electronic device includes a base layer, a circuit layer disposed on the base layer and including a transistor, a plurality of inorganic films, and a plurality of organic films. A display element layer is disposed on the circuit layer. An encapsulation layer is disposed on the display element layer. An input sensor is disposed on the encapsulation layer and includes a sensor base layer, a sensor conductive layer disposed on the sensor base layer, and a sensor insulating layer disposed on the sensor base layer and including silicon nitride (SiNx). The sensor base layer includes a buffer insulating layer including silicon (Si) and oxygen (O), and an atomic percent of oxygen (O) in the buffer insulating layer is in a range of 2 at % to 67 at %.