Micromechanical Sensor Diaphragm Etching Process

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Solution Overview

Problem

Existing methods for producing micromechanical sensor elements with diaphragms for relative pressure measurement face challenges in creating access openings to the cavity from the back side of the substrate without damaging the diaphragm structure, particularly due to the delicate timing required for etching processes and variations in substrate thickness.

Innovation Solution

A two-step etching process involving anisotropic and isotropic etching steps is used, where the access opening is placed in a region where the substrate material reaches the first diaphragm layer, allowing for temporal restriction of the etching process without additional stop layers, thereby simplifying the production and making it more robust by decoupling etching duration from substrate thickness variations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a single temporal limited etching step is used to produce the access opening from the back side, then the production process is simple, but the etching duration must be precisely adjusted to substrate thickness which varies, making the process sensitive and difficult to control

Engineering Contradiction:
Improvesimplicity of etching processVSAvoidcontrol of etching depth
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The single etching step is divided into two sequential steps: a first etching step that creates an etching channel through the substrate to a predetermined depth, and a second etching step that expands the channel end region to form the access opening. This segmentation allows each step to be controlled independently, eliminating the need to precisely match etching duration to substrate thickness variations.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The first etching step performs a preliminary action by creating the etching channel to a controlled depth before the second expansion step. This preliminary structure provides a foundation that guides the subsequent expansion, ensuring the access opening forms at the correct location and depth regardless of substrate thickness variations.

Inventive Principle:
Principle #10Preliminary action

2Ease of operation

If the access opening is produced by extending the etching deep into the substrate, then the cavity is accessible, but the diaphragm structure may be damaged or the production tolerance becomes tight

Engineering Contradiction:
Improveaccess to cavityVSAvoidpositioning accuracy of access opening
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The access opening formation is segmented into channel creation and channel expansion phases. The first etching step creates the channel to a safe depth that does not compromise the diaphragm, while the second step expands only the end region to provide access. This ensures the diaphragm remains intact while achieving cavity accessibility.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The etching process applies different characteristics to different regions: the etching channel has a controlled depth and shape, while the end region is selectively expanded to create the access opening. This local differentiation allows the access opening to be formed with appropriate dimensions and position without affecting the overall structural integrity.

Inventive Principle:
Principle #3Local quality

3Manufacturing precision

If additional etching stop layers are used to control the etching depth, then the positioning is more accurate, but the production process becomes more complex and costly

Engineering Contradiction:
Improveetching depth controlVSAvoidnumber of process steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The etching process uses the substrate's own structure and the controlled expansion of the etching channel to self-regulate the access opening depth. The channel is etched to a predetermined depth that naturally positions the expansion zone, eliminating the need for external stop layers or additional control mechanisms.

Inventive Principle:
Principle #25Self-service

Solution Approach 2:

The process controls etching depth by changing parameters within the etching steps themselves (duration, power, gas flow) rather than adding physical stop layers. The first step uses parameters to achieve the channel depth, and the second step uses different parameters to expand the end region, providing control without additional structural elements.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the production of sensor elements with improved production tolerance and mechanical properties, allowing for precise control of access openings and cavity connections, facilitating the use of APSM technology for small chip sizes and exact production tolerances while maintaining CMOS compatibility and cost-effectiveness.

Implementation Method 1

The etching process for producing the access opening includes at least one anisotropic etching step and at least one isotropic etching step. In the anisotropic etching step, an etching channel from the back side of the substrate is produced

Methodology Applied
Scientific EffectAnisotropic etching:

Implementation Method 2

At least the end region of this etching channel is then expanded in the isotropic etching step until the etching channel is connected to the cavity

Methodology Applied
Scientific EffectIsotropic etching:

Data Source

PatentUS8530261B2Method for producing a component, and sensor element
Publication Date: 2013.09.10 ROBERT BOSCH GMBH
  • US8530261B2 patent drawing
  • US8530261B2 patent drawing
  • US8530261B2 patent drawing

AI summary

A method for producing a component having at least one diaphragm formed in the upper surface of the component, which diaphragm spans a cavity, and having at least one access opening to the cavity from the back side of the component, at least one first diaphragm layer and the cavity being produced in a monolithic semiconductor substrate from the upper surface of the component, and the access opening being produced in a temporally limited etching step from the back side of the substrate. The access opening is placed in a region in which the substrate material comes up to the first diaphragm layer. The etching process for producing the access opening includes at least one anisotropic etching step and at least one isotropic etching step, in the anisotropic etching step, an etching channel from the back side of the substrate being produced, which terminates beneath the first diaphragm layer in the vicinity of the cavity, and at least the end region of this etching channel being expanded in the isotropic etching step until the etching channel is connected to the cavity.