Sensor Die Chamber Insulation for Short-Circuit Isolation
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Solution Overview
Problem
As device packages become smaller, the reduced spacing between conductive terminals and semiconductor material in protective cap dies leads to short circuits and other device degradation, which existing solutions like through silicon via (TSV) structures increase manufacturing cost and complexity.
Innovation Solution
A semiconductor device design with a second semiconductor die bonded to a first semiconductor die, featuring an insulation layer along its lateral sides to create a protected chamber for the sensor circuit, spaced apart from conductive terminals, providing electrical isolation while allowing for reduced package height and cost-effective fabrication.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If device packages are reduced in size, then package compactness is improved, but the spacing between conductive terminals and protective cap die is reduced leading to short circuit risk
Solution Approach 1:
An insulation layer is introduced as an intermediary element between the conductive terminal and the protective cap die. This insulation layer, formed along the lateral side of the protective cap die, provides electrical isolation that prevents short circuits while allowing the package to maintain a compact size. The mediator enables close spacing without compromising reliability.
2Reliability
If through silicon via (TSV) structures are used to provide insulation, then short circuit prevention is improved, but manufacturing cost and complexity increase
Solution Approach 1:
The complex TSV structure is extracted and replaced with a simpler insulation layer formation process. Instead of creating through-silicon vias with insulation, the patent uses a more straightforward approach of forming an insulation layer along the lateral side of the protective cap die, thereby reducing manufacturing complexity while maintaining short circuit prevention capability.
Solution Approach 2:
The patent employs a simpler, more cost-effective insulation structure rather than expensive TSV technology. The insulation layer can be formed using standard semiconductor processing techniques, making it a more economical solution that achieves the same protective function without the high cost and complexity of TSV structures.
3Reliability
If through silicon via (TSV) structures are used to provide insulation, then short circuit prevention is improved, but manufacturing cost increases
Solution Approach 1:
The patent replaces expensive TSV structures with a more affordable insulation layer that can be formed using conventional semiconductor manufacturing processes. This insulation layer provides the necessary electrical isolation at a lower cost, making the overall device more economically viable while maintaining reliability.
Data Source
AI summary
An electronic device includes first and second semiconductor dies, the first semiconductor die having: a side extending in a first plane of orthogonal first and second directions; a sensor circuit along the side; and a conductive terminal extending outward from the side along an orthogonal third direction, and the second semiconductor die bonded to the first semiconductor die and having: a bottom side; a lateral side; and an insulation layer, the bottom side spaced apart from and facing the side of the first semiconductor die to form a protected chamber for the sensor circuit, the lateral side of the second semiconductor die spaced apart from the conductive terminal along the first direction, the insulation layer extending along the lateral side of the second semiconductor die, and the insulation layer spaced apart from and facing the conductive terminal along the first direction.