Sensor Fabrication Using Multi-Layer Mask Merging
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Solution Overview
Problem
Conventional sensors for CT equipment have high production costs and complex fabrication processes, limiting production capacity and defect-free rates due to the need for multiple patterning processes and masks.
Innovation Solution
A sensor design featuring a top gate Thin Film Transistor (TFT) device and photodiode sensing device, fabricated using a reduced number of patterning processes, with a base substrate, gate lines, data lines, and sensing elements arranged in an array, where each sensing element includes a source and drain electrode, ohmic layer, active layer, gate insulating layer, and gate electrode, and a photodiode with a receiving electrode, transparent electrode, and bias line.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple patterning processes are used to form multiple patterning layers of the sensor, then the sensor structure and functionality are achieved, but the fabrication cost increases and production capacity decreases
Solution Approach 1:
The patent combines multiple patterning operations into a single patterning process by using a multi-layer mask structure. The mask includes a first mask layer and a second mask layer formed on opposite sides of a support layer, allowing simultaneous definition of multiple patterning layers (gate electrode layer, active layer, source/drain electrode layer) in one exposure and development cycle, thereby reducing the number of fabrication steps while maintaining structural precision
Solution Approach 2:
The mask is segmented into multiple functional layers (first mask layer, second mask layer, support layer) that can be independently designed and patterned. Each mask layer corresponds to a specific patterning layer in the sensor, allowing complex multi-layer structures to be formed through a single processing step while maintaining the precision required for each individual layer
2Manufacturing precision
If multiple patterning processes are used to form multiple patterning layers of the sensor, then the sensor structure and functionality are achieved, but the fabrication process becomes complicated
Solution Approach 1:
The patent merges multiple sequential patterning processes into a single integrated process. By forming the first and second mask layers on opposite sides of a support layer and performing one exposure and development cycle, the complex multi-step process (masking, developing, exposure, etching, peeling repeated multiple times) is simplified into a unified fabrication step that achieves the same structural result with reduced process complexity
3Manufacturing precision
If 9 to 11 masks are required for multi-layer sensor fabrication, then multiple patterning layers can be formed, but the fabrication cost becomes high
Solution Approach 1:
The patent consolidates the function of 9 to 11 separate masks into a single multi-layer mask assembly. The first mask layer and second mask layer work together to define patterns for multiple sensor layers simultaneously, eliminating the need for numerous individual masks and their associated alignment and processing steps, thereby dramatically reducing fabrication costs while maintaining multi-layer patterning capability
Solution Approach 2:
The single multi-layer mask structure performs multiple patterning functions that would otherwise require separate masks. The mask assembly can define patterns for gate electrodes, active layers, source/drain regions, and other sensor components in one operation, making it a universal patterning tool that replaces multiple specialized masks
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method reduces the number of masks and production costs, simplifies the fabrication process, and significantly improves production capacity and defect-free rates by using fewer patterning steps, resulting in a more efficient and cost-effective sensor production.
Implementation Method 1
the photocurrent signal generated by the photodiode 13
Data Source
AI summary
A sensor and its fabrication method are provided, wherein the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element comprising a TFT device and a photodiode sensing device, wherein the TFT device is a top gate TFT. The photodiode sensing device includes: a receiving electrode connected with a source electrode, a photodiode disposed on the receiving electrode, a transparent electrode disposed on the photodiode, and a bias line disposed on and connected with the transparent electrode, the bias line is disposed as parallel to the gate line. In comparison with the conventional technology, the method for fabricating the sensor of the invention reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect free rate.